GaN MMIC Power Amplifiers for S-band and X-band
conference paper
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the AlGaN/GaN technology of Chalmers University of Technology using 0.25 μm HEMTs. The S-band amplifier operates at frequencies from 3 to 4 GHz and has a maximum output power of 5.6 W with an associated efficiency of 28 %. The X-band amplifier has a maximum output power of 4.8 W.
TNO Identifier
221870
Publisher
Eurpean Microwave Association EuMA
Source title
European Microwave Week, EuMW 2008 - 38th European Microwave Conference, EuMC 2008, 27-31 October 2008, Amsterdam, The Netherlands
Files
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