Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs
conference paper
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMIC s have a very good yield and performance for a first iteration design.
Topics
TNO Identifier
213784
Publisher
European Microwave Association EuMA
Source title
8th European Microwave Week EuMW - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, GAAS 2005, 3-4 October 2005, Paris, France
Place of publication
Louvain-la-Neuve
Pages
237 - 240