Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates
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We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading
to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma (10sccm, 40mTorr, 20W, t=30s, DC bias = -167V, 20gr. C) to the AlGaN surface before annealing of the ohmic contacts and surface passivation with plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN2) In addition, this process strongly improves the uniformity of RF device performance and is independent of the material source.
to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma (10sccm, 40mTorr, 20W, t=30s, DC bias = -167V, 20gr. C) to the AlGaN surface before annealing of the ohmic contacts and surface passivation with plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN2) In addition, this process strongly improves the uniformity of RF device performance and is independent of the material source.
TNO Identifier
210334
Publisher
EuMA
Source title
European Microwave Week - GAAS 2004; 12th Gallium Arsenide and other Compound Semiconductors Application Symposium 11-12 October 2004, RAI, Amsterdam, The Netherlands
Place of publication
Louvain-la-Neuve
Pages
75-78
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