11.9 W output power at S-band from 1 mm AlGaN/GaN HEMTs
conference paper
We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (Wg) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an optimized process flow comprising a low-power Ar-based plasma after ohmic contact metallization, cleaning of the AlGaN surface prior to the Schottky gate metallization using a diluted ammonia (NH4OH) solution, and passivation of the AlGaN surface using a silicon nitride layer deposited by plasma enhanced chemical vapor deposition. We will show that the best RF power performance has been achieved by HEMTs with iron-doped GaN buffer layers (GaN:Fe). Devices with a total gate width of 1 mm yielded a maximum output power of 11.9 W at S-band (2 - 4 GHz) under class AB bias conditions (VDs = 40-60 V, and Vos = -4.65 - 4.0 V). © The Electrochemical Society.
TNO Identifier
28631
ISBN
19385862 ; 9781566776530
Source title
State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting, 12 October 2008 through 17 October 2008, Honolulu, HI, Conference code: 75713
Pages
169-179