11.9 W output power at 4 GHz from 1 mm AlGaN/GaN HEMT
conference paper
A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Hence, it is obvious that breakdown voltages over 160 V are required to achieve record output power densities larger than 30 W/mm [3] for class A operation. Maximum RF output power of GaN based HEMTs is significantly less than what can be estimated from its DC characteristics, the so-called DC to RF dispersion [4]. This gate lag effect and a good passivation of the AlGaN surface under the gate contact are key elements in achieving high power HEMTs.
TNO Identifier
28630
Source title
Meeting Abstracts of the 214th ECS (Electro Chemical Society) Meeting - October 12-17, 2008, Honolulu, HI, paper 2078