Expanding thermal plasma CVD of textured ZNO with focus on solar cell applications
conference paper
A new method for low temperature deposition of surface textured ZnO is presented utilizing an expanding thermal plasma created by a cascaded arc. Films have been deposited at 150-350°C at a rate of typically 0.65-0.75 nm/s, exhibiting low sheet resistance (> 10 Ω/□), high transmittance (>80%) and a rough surface texture. Surface roughness increases with increasing deposition temperature and film thickness. First pin a-Si:H solar cells deposited on this ZnO show initial efficiencies approaching 10%. cop. 2000 IEEE.
TNO Identifier
530867
ISSN
01608371
ISBN
0780357728
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
916009
Source title
28th IEEE Photovoltaic Specialists Conference, PVSC 2000, 15 September 2000 through 22 September 2000
Pages
822-824
Files
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