Comparison of extreme ultraviolet sources for lithography applications
article
The source is one of the critical factors for the success of Extreme Ultraviolet Lithography (EUVL). Various possibilities to generate EUV radiation exist. The Laser Produced Plasma (LPP), the Synchrotron Wiggler and the gas discharge sources (Z-pinch, Plasma Focus and Capillary discharge) all have the potential to be used for EUV Lithography. EUV sources have to be evaluated as an integral part of the lithography tool, using criteria such as cost of ownership (CoO), wafer throughput, debris contamination issues and dose repeatability. Such a comparison, based on published data and known plans for these sources, has been performed. Although none of the currently known plans for the sources is compliant with requirements for an EUVL production tool, significant further improvement of their performance seems feasible. The LPP and the Synchrotron Wiggler are identified as having a high technical maturity but a relatively high CoO. On the other hand the gas discharge sources have a potential to become low cost and efficient EUVL sources provided a number of technical problems are solved.
Topics
TNO Identifier
235570
ISSN
01679317
Source
Microelectronic Engineering, 53(1), pp. 681-684.
Publisher
Elsevier
Collation
4 p.
Place of publication
Amsterdam
Pages
681-684
Files
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