Non Invasive Thermal Imaging of GaAs MESFET's
conference paper
We demonshate the use of an infrared focal plane array (IR-FPA) to measure the spatially-resolved surface temperature of a
GaAs MESFET (gallium anenide metal-semiconductor field-effect lransistor) under DC and RF operating conditions. By
compensating for variations of the small emissivity, absolute temperatures of +/- 5 oC, and small temperature differences of 1 oC
can be determined. By deconvolution of the lens MTF (modulation transfer function) we attain a resolution of 6.25 um. The
combination of thermal and spatial sensitivity makes our set-up ideally suited for non-destructive characterisation of
semiconductor devices.
GaAs MESFET (gallium anenide metal-semiconductor field-effect lransistor) under DC and RF operating conditions. By
compensating for variations of the small emissivity, absolute temperatures of +/- 5 oC, and small temperature differences of 1 oC
can be determined. By deconvolution of the lens MTF (modulation transfer function) we attain a resolution of 6.25 um. The
combination of thermal and spatial sensitivity makes our set-up ideally suited for non-destructive characterisation of
semiconductor devices.
TNO Identifier
94826
Publisher
SPIE
Source title
Proceedings SPIE - Infrared Technology XXI, 9-13 July 1995, San Diego, CA. Part Two
Editor(s)
Andresen, B.F.
Strojnik, M.
Strojnik, M.
Place of publication
Bellingham, WA.
Pages
696-706
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