Searched for: subject%3A%22nonvolatile%255C%2Bmemory%22
(1 - 6 of 6)
document
Nougaret, L. (author), Kassa, H.G. (author), Cai, R. (author), Patois, T. (author), Nysten, B. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), de Leeuw, D.M. (author), Marrani, A. (author), Hu, Z. (author), Jonas†, A.M. (author)
We demonstrate the design of a multifunctional organic layer by the rational combination of nanosized regions of two functional polymers. Instead of relying on a spontaneous and random phase separation process or on the tedious synthesis of block copolymers, the method involves the nanomolding of a first component, followed by the filling of the...
article 2014
document
Kam, B. (author), Ke, T.H. (author), Chasin, A. (author), Tyagi, M. (author), Cristoferi, C. (author), Tempelaars, K. (author), van Breemen, A.J.J.M. (author), Myny, K. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for...
article 2014
document
van Breemen, A. (author), Kam, B. (author), Cobb, B. (author), Rodriguez, F.G. (author), van Heck, G. (author), Myny, K. (author), Marrani, A. (author), Vinciguerra, V. (author), Gelinck, G.H. (author)
In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to a size of 16 × 16, processed on thin (25 μm)...
article 2013
document
Brondijk, J.J. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model is presented that describes the charge...
article 2012
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Asadi, K. (author), Wildeman, J. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Resistive switches have been fabricated using a phase-separated blend film of ferroelectric random copolymer poly(vinylidene fluoride-co-trifluoroethylene) with the organic semiconductor regio-irregular poly(3-hexylthiophene) (rir-P3HT). Spin-coated blend films have been contacted with symmetrical Ag top and Ag bottom electrodes, yielding...
article 2010
document
TNO Defensie en Veiligheid (author), Maas, A.P.M. (author), van Vliet, F.E. (author)
This paper describes the design and performance of a low-cost synthesized FMCW radar module, operating in S band. The bi-layer PCB contains a frequency-agile low phase-noise synthesizer and three identical coherent receive-channels. The transmit channel has an automatic power control system that reduces the output power when a large reflection...
conference paper 2008
Searched for: subject%3A%22nonvolatile%255C%2Bmemory%22
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