Searched for: subject%3A%22Zinc%255C%2Boxide%255C%2B%255C%2528ZnO%255C%2529%22
(1 - 4 of 4)
document
Xu, M. (author), Wachters, A.J.H. (author), van Deelen, J. (author), Mourad, M.C.D. (author), Buskens, P.J.P. (author)
We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with...
article 2014
document
de Bruyn, P. (author), Moet, D.J.D. (author), Blom, P.W.M. (author)
We present an all-solution processed polymer light-emitting diode (PLED) using spincoated zinc oxide (ZnO) and vanadium pentoxide (V2O5) as electron and hole injecting contact, respectively. We compare the performance of these devices to the standard PLED design using PEDOT:PSS as anode and Ba/Al as cathode. We show that the all-solution...
article 2012
document
Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...
article 2011
document
Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Ferroni, M. (author), Federici, S. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Thin-film transistors (TFTs), which use zinc oxide (ZnO) as an active layer, were fabricated and investigated in detail. The transport properties of ZnO deposited by spray pyrolysis (SP) on a TFT structure are studied in a wide range of temperatures, electrical conditions (i.e., subthreshold, above-threshold linear, and saturation regions), and...
article 2011
Searched for: subject%3A%22Zinc%255C%2Boxide%255C%2B%255C%2528ZnO%255C%2529%22
(1 - 4 of 4)