Characterizing electron beam induced damage in metrology and inspection of advance devices

In-line height profiling metrology sensor for zero defect production control

Contemporary production systems of mechanical precision parts show challenges as increased complexity, tolerances shrinking to sub-microns and yield losses that must be mastered to the extreme. More advanced automation and process control is required to accomplish this task. Often a solution based on feedforward/feedback control is chosen...

Characterization of EBL2 EUV exposure facility

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray...

Sub 20nm particle inspection on EUV mask blanks

The Rapid Nano is a particle inspection system developed by TNO for the qualification of EUV reticle handling equipment. The detection principle of this system is dark-field microscopy. The performance of the system has been improved via model-based design. Through our model of the scattering process we identified two key components to improving...

Simultaneous AFM nano-patterning and imaging for photomask repair

In this paper we present a new AFM based nano-patterning technique that can be used for fast defect repairing of high resolution photomasks and possibly other high-speed nano-patterning applications. The proposed method works based on hammering the sample with tapping mode AFM followed by wet cleaning of the residuals. On the area where a...

Large dynamic range Atomic Force Microscope for overlay improvements

Nowadays most overlay metrology tools assess the overlay performance based on marker features which are deposited next to the functional device features within each layer of the semiconductor device. However, correct overlay of the relatively coarse marker features does not directly guarantee correct overlay of the much smaller device features....

EUV blank defect and particle inspection with high throughput immersion AFM with 1nm 3D resolution

Inspection of EUV mask substrates and blanks is demanding. We envision this is a good target application for massively parallel Atomic Force Microscopy (AFM). We envision to do a full surface characterization of EUV masks with AFM enabling 1nm true 3D resolution over the entire surface. The limiting factor to do this is in the sensor itself:...

Non-contact distance measurement and profilometry using thermal near-field radiation towards a high resolution inspection and metrology solution

Optical near-field technologies such as solid immersion lenses and hyperlenses are candidate solutions for high resolution and high throughput wafer inspection and metrology for the next technology nodes. Besides sub-diffraction limited optical performance, these concepts share the necessity of extreme proximity to the sample at distances that...

Nanometre-accurate form measurement machine for E-ELT M1 segments

To enable important scientific discoveries, ESO has defined a new ground-based telescope: the European Extremely Large Telescope (E-ELT). The baseline design features a telescope with a 39-m-class primary mirror (M1), making it the largest and most powerful telescope in the world. The M1 consists of 798 hexagonal segments, each about 1.4 m wide,...

Comparison of asphere measurements by tactile and optical metrological instruments

A comparison of topography measurements of aspherical surfaces was carried out by European metrology institutes, other research institutes and a company as part of an European metrology research project. In this paper the results of this comparison are presented. Two artefacts were circulated, a small polymer coated aspherical lens with a clear...

Gaia on-board metrology: Basic angle and best focus

The Gaia payload ensures maximum passive stability using a single material, SiC, for most of its elements. Dedicated metrology instruments are, however, required to carry out two functions: monitoring the basic angle and refocusing the telescope. Two interferometers fed by the same laser are used to measure the basic angle changes at the level...