Searched for: subject%3A%22Transistors%22
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Lodari, M. (author), Kong, O. (author), Rendell, M. (author), Tosato, A. (author), Sammak, A. (author), Veldhorst, M. (author), Hamilton, A.R. (author), Scappucci, G. (author)
We demonstrate that a lightly-strained germanium channel ("// = −0.41%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1 × 106 cm2/Vs and percolation density less than 5 × 1010 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density...
article 2022
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Mameli, A. (author), Parish, J.D. (author), Dogan, T. (author), Gelinck, G. (author), Snook, M.W. (author), Straiton, A.J. (author), Johnson, A.L. (author), Kronemeijer, A.J. (author)
Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)2, and H2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of...
article 2022
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Fattori, M. (author), Cardarelli, S. (author), Fijn, J. (author), Harpe, P. (author), Charbonneau, M. (author), Locatelli, D. (author), Lombard, S. (author), Laugier, C. (author), Tournon, L. (author), Jacob, S. (author), Romanjek, K. (author), Coppard, R. (author), Gold, H. (author), Adler, M. (author), Zirkl, M. (author), Groten, J. (author), Tschepp, A. (author), Lamprecht, B. (author), Postl, M. (author), Stadlober, B. (author), Socratous, J. (author), Cantatore, E. (author)
In this work is presented for the first time a large-area proximity sensing surface fabricated by printing organic materials and featuring distributed Analog Frontend Electronics (AFE) based on Organic Thin-Film Transistors (OTFTs). The sensor foil enables detecting the presence of approaching heat sources (like humans or moving machines) at a...
article 2022
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Merkx, M.J.M. (author), Jongen, R.G.J. (author), Mameli, A. (author), Lemaire, P.C. (author), Sharma, K. (author), Hausmann, D.M. (author), Kessels, W.M.M. (author), Mackus, A.J.M. (author)
As the semiconductor industry progresses toward more complex multilayered devices with ever smaller features, accurately aligning these layers with respect to each other has become a bottleneck in the advancement to smaller transistor nodes. To avoid alignment issues, area-selective atomic layer deposition (ALD) can be employed to deposit...
article 2021
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Iniguez, B. (author), Nathan, A. (author), Kloes, A. (author), Bonnassieux, Y. (author), Romanjek, K. (author), Charbonneau, M. (author), van der Steen, J.L. (author), Gelinck, G.H. (author), Gneiting, T. (author), Mohamed, F. (author), Ghibaudo, G. (author), Cerdeira, A. (author)
We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated...
article 2021
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Kronemeijer, A.J. (author), de Haas, G. (author), Verbeek, R. (author), Bel, T. (author), van de Laar, R. (author), Ugalde-Lopez, L. (author), Gelinck, G. (author)
This paper presents a monolithic manufacturing process to realize active-matrix meshed TFT arrays on foil with physical voids between pixels, realizing membrane-like structures for use in biometrics-under-display applications. Moreover, however, the concept enables new applications in the biomedical electronics domain.
conference paper 2021
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Dogan, T. (author), de Riet, J. (author), Bel, T. (author), Katsouras, I. (author), Witczak, L. (author), Kronemeijer, A.J. (author), Janssen, R.A. (author), Gelinck, G.H. (author)
Sub-micrometer thin-film transistors (TFTs) are realized using multi-level imprint lithography. Amorphous indium gallium zinc oxide (α-IGZO) TFTs with channel lengths as small as 0.7 μm, field-effect mobility of 10 cm2 V−1 s−1 and on/off ratio of circa 107 were integrated into a 1000-pixels per inch (ppi) TFT backplane array. The reduction of...
article 2020
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Simicic, M. (author), Ashif, N.R. (author), Hellings, G. (author), Chen, S.H. (author), Nag, M. (author), Kronemeijer, A.J. (author), Myny, K. (author), Linten, D. (author)
The thin-film-transistor (TFT) technology has attracted significant attention in account of the possibility to manufacture transistors on large and flexible substrates, at low processing temperatures and at a low cost. Next to the well-established amorphous silicon TFT technology used mostly for displays, the amorphous Indium-Gallium-Zinc-Oxide ...
article 2020
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Dogan, T. (author), Verbeek, R. (author), Kronemeijer, A.J. (author), Bobbert, P.A. (author), Gelinck, G.H. (author), van der Wiel, W.G. (author)
A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm...
article 2019
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Ram, M.S. (author), de Kort, L. (author), de Riet, J. (author), Verbeek, R. (author), Bel, T. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
Thin-film transistors (TFTs) are the fundamental building blocks of today's display industry. To achieve higher drive currents and device density, it is essential to scale down the channel lengths of TFTs. To be able to fabricate short-channel TFTs in large volumes is also equally important in order to realize lower fabrication costs and higher...
article 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or...
conference paper 2019
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Hendrickx, N.W. (author), Tagliaferri, M.L.V. (author), Kouwenhoven, M. (author), Li, R. (author), Franke, D.P. (author), Sammak, A. (author), Brinkman, A. (author), Scappucci, G. (author), Veldhorst, M. (author)
We fabricate Josephson field-effect transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Perot resonances,...
article 2019
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Zulqarnain, M. (author), Stanzione, S. (author), van der Steen, J.L.P.J. (author), Gelinck, G.H. (author), Abdinia, S. (author), Cantatore, E. (author)
With the advent of the Internet of things, wearable sensing devices are gaining importance in our daily lives for applications like vital signal monitoring during sport and health diagnostics. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) fabricated on flexible large-area substrates are a very interesting platform to...
article 2019
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Vigneau, F. (author), Mizokuchi, R. (author), Colao Zanuz, D. (author), Huang, X. (author), Tan, S. (author), Maurand, R. (author), Frolov, S. (author), Sammak, A. (author), Scappucci, G. (author), Lefloch, F. (author), de Franceschi, S. (author)
Hybrid superconductor−semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting...
article 2019
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Tordera, D. (author), Peeters, B. (author), Akkerman, H.B. (author), van Breemen, A.J.J.M. (author), Maas, J. (author), Shanmugam, S. (author), Kronemeijer, A.J. (author), Gelinck, G.H. (author)
Organic photodetectors (OPDs) have attracted much attention in recent years, due to their promise in large-area light sensing applications. Here, high-resolution slot-die-coated large-area bulk heterojunction organic photodiode (OPD) arrays are reported. The OPD uses a novel electron transport layer, indium gallium zinc oxide in combination with...
article 2019
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de Roose, F. (author), Genoe, J. (author), Kronemeijer, A.J. (author), Myny, K. (author), Dehaene, W. (author)
Thin-film transistor (TFT) technologies have long been used predominantly for display fabrication and are attractive for large area, low cost and flexible circuit applications. Thanks to the improving performance of thin-film metal-oxide NFC tags and data processing chips on foil [1], [2], fabs are considering the large-scale production of...
conference paper 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or...
conference paper 2019
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Papadopoulos, N. (author), Steudel, S. (author), Kronemeijer, A.J. (author), Ameys, M. (author), Myny, K. (author)
conference paper 2019
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van der Bent, G. (author), de Hek, P. (author), van Vliet, F.E. (author)
The application of stacked-FETs in power ampli fiers allows for a supply voltage higher than supported by the breakdown voltage of a single transistor. Potential benefits of the increased supply voltage are reduced supply currents and a lower matching ratio at the output of the amplifier. Furthermore, an increased output power per chip area is...
article 2019
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Andersson, O. (author), Maas, J. (author), Gelinck, G. (author), Kemerink, M. (author)
Electronic ratchets use a periodic potential with broken inversion symmetry to rectify undirected (electromagnetic, EM) forces and can in principle be a complement to conventional diode-based designs. Unfortunately, ratchet devices reported to date have low or undetermined power conversion efficiencies, hampering applicability. Combining...
article 2019
Searched for: subject%3A%22Transistors%22
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