Monolithic Two-Terminal Perovskite/CIS Tandem Solar Cells with Efficiency Approaching 25%

Monolithic two-terminal (2T) perovskite/CuInSe2 (CIS) tandem solar cells (TSCs) combine the promise of an efficient tandem photovoltaic (PV) technology with the simplicity of an all-thin-film device architecture that is compatible with flexible and lightweight PV. In this work, we present the first-ever 2T perovskite/CIS TSC with a power...

Atmospheric spatial atomic-layer-deposition of Zn(O,S) buffer layer for flexible Cu(In,Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15×15 cm2) S-ALD set-up. We achieved values of...

Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15x15 cm2) S-ALD set-up. We achieved values of...

Electrochemical etching of molybdenum for shunt removal in thin film solar cells

High yield and reproducible production is a major challenge in up-scaling thin film Cu(In,Ga)Se2(CIGS) solar cells to large area roll-to-roll industrial manufacturing. Pinholes enabling Ohmic contact between the ZnO:Al front-contact and Mo back contact of the CIGS cell create electrical shunts that are detrimental to the output of the cell and...

Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

Modeling indicates a potential efficiency boost of 17% if thin-film solar panels are featured with a metallic grid. Variations of transparent conductive oxide sheet resistance, cell length, and grid dimensions are discussed. These parameters were optimized simultaneously to obtain the best result. Moreover, the power output as a function of...

High-throughput processes for industrially scalable deposition of zinc oxide at atmospheric pressure

ZnO films have been grown on a moving glass substrate by high temperature (480 0C) chemical vapour deposition (CVD) and low temperature (200 0C) plasma enhanced CVD (PE-CVD) process at atmospheric pressure. Deposition rates above 7 nm/s have been achieved for substrate speeds from 20 to 500 mm/min. The conductivity of the films is enhanced by Al...

Atmospheric pressure CVD of SNO2 and ZNO:AL

Atmospheric pressure CVD (APCVD) is a highly cost effective method of depositing transparent conductive oxides (TCOs). In this work, insights in alcohol addition in the widely applied SnO2 process are discussed, including high resolution TEM images. Furthermore, the APCVD process of ZnO:Al was demonstrated on an industrial moving belt APCVD...

Low resistive trasparent conductors with metallic grids: Modeling and experiments

At present, transparent conducting oxides (TCOs) are still superior in performance to most other transparent conductors. Results on opto-electronic modeling and design optimization of TCOs are presented using a monolithically integrated CIGS cell configuration as case. For various cell dimensions and TCO characteristics, the cell output was...

Transparent conducting materials: Overview and recent results

An overview of different transparent conductors is given. In addition, atmospheric pressure CVD of ZnO resulted in conductivities below 1 mΩ cm for a temperature of 480°C, whereas at a process temperature of 200°C a value of 2 mΩ cm was obtained. Also atmospheric pressure spatial ALD was used to make conductive ZnO. Furthermore, the properties...

Industrial high-rate (~14 nm/s) deposition of low resistive and transparent ZnOx:Al films on glass

Aluminum doped ZnOx (ZnOx:Al) films have been deposited on glass in an in-line industrial-type reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. Tertiary-butanol has been used as oxidant for diethylzinc and trimethylaluminium as dopant gas. ZnOx:Al films can be grown at very high deposition rates of ~14 nm/s...

Electrodeposition of contact grids on thin film solar cells