Atmospheric Pressure Plasma Assisted Spatial ALD of Silicon Nitride

Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-spatial-ALD) of SiNx is demonstrated for the first time. Using bis(diethylamino)silane (BDEAS) and N2 plasma from a dielectric barrier discharge source, a process was developed at low deposition temperatures (≤ 250 °C). The effect of N2 plasma exposure time and overall...

High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO2 with Interleaved Small Molecule Inhibitors and Integrated Back-Etch Correction for Low Defectivity

A first-of-its-kind area-selective deposition process for SiO2 is developed consisting of film deposition with interleaved exposures to small molecule inhibitors (SMIs) and back-etch correction steps, within the same spatial atomic layer deposition (ALD) tool. The synergy of these aspects results in selective SiO2 deposition up to ˜23 nm with...

Large‐area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure

Indium gallium zinc oxide (IGZO) is deposited using plasma‐enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm2. Excellent uniformity and thickness control leads to high‐performing and stable coplanar top‐gate self‐aligned (SA) thin‐film transistors (TFTs). The integration of a sALD‐deposited aluminum oxide...

Large-area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure

Indium gallium zinc oxide (IGZO) is deposited using plasma-enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm 2 . Excellent uniformity and thickness control leads to high-performing and stable coplanar top-gate self-aligned (SA) thin-film transistors (TFTs). The integration of a sALD-deposited aluminum oxide...

Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15x15 cm2) S-ALD set-up. We achieved values of...

Atmospheric spatial atomic layer deposition of in-doped ZnO

Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the...

The kinetics of low-temperature spatial atomic layer deposition of aluminum oxide

Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This, however, requires low-temperature deposition processes. We have investigated the kinetics of low-temperature (< 100 C) spatial atomic layer deposition of alumina from tri...

Low temperature and roll-to-roll spatial atomic layer deposition for flexible electronics