High-mobility channels in Thin Film Transistors made from amorphous indium zinc oxide (IZO) semiconductor films grown by atmospheric pressure plasma-enhanced spatial ALD

Plasma technology for spatial ALD of conductive layers

Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO2 for Low-Temperature, Large-Area Applications

High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...

On the Growth, Percolation and Wetting of Silver Thin Films Grown by Atmospheric-Plasma Enhanced Spatial Atomic Layer Deposition

In this work we studied the deposition of silver (Ag) by spatial-ALD on molybdenum layers serving as a growth model substrate. Mo-layers were selected for testing the suitability of spatial-ALD in fabricating MoO3/Ag/MoO3 tri-layer transparent conductor (TC) stacks used for light-management optimization in organic-based and perovskites solar...

Plasma-Enhanced Atmospheric-Pressure Spatial ALD of Al2O3 and ZrO2

Non-thermal plasma sources are known to lower the operation temperatures and widen the process windows in thermal ALD of thin-film materials. In spatial ALD, novel plasma sources with exceptional dimensional and chemical stability are required to provide the flow geometries optimized for efficient transport and use of radicals (O, N, H, OH, NH,...

Developments in plasma enhanced spatial ALD for high throughput applications [3.04]

Atomic layer deposition by means of spatial separation of reactive gases is emerging as an industrial manufacturing technology. Integration of non-thermal plasma in spatial ALD machines will further expand the process window towards lower operation temperatures and specific materials requiring radicals (O, N, H, OH, NH etc.). Plasma sources with...

In rap tempo atoomlagen aanbrengen: VOM dag van de oppervlaktetechnologie bespreekt depositie in detail

TN0 is momenteel bezig met het doorontwikketen van SpatiaI Atomic Layer Deposition fspatiaL ALDI: het aanbrengen van oppervtaktelagen met atoomtaagdikte. 0nderzoekster Mireitte Smets MSc besprak op de VOM Dag van de Oppervlaktetechnologie (15 november) de laatste stand van zaken en de inzet van ALD in de praktijk. "Inmiddels zijn we zover dat we...