Searched for: subject%3A%22Spatial%255C%2BALD%22
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Shen, J. (author), Roozeboom, F. (author), Mameli, A. (author)
Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-spatial-ALD) of SiNx is demonstrated for the first time. Using bis(diethylamino)silane (BDEAS) and N2 plasma from a dielectric barrier discharge source, a process was developed at low deposition temperatures (≤ 250 °C). The effect of N2 plasma exposure time and overall...
article 2023
document
Mameli, A. (author), Roozeboom, F. (author)
public lecture 2021
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van den Bruele, F.J. (author), Grob, F. (author), Creyghton, Y.L.M. (author), Shen, J. (author), Bolt, P. (author), Poodt, P.W.G. (author)
public lecture 2021
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Mameli, A. (author), Karasulu, B. (author), Roozeboom, F. (author)
public lecture 2021
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Mione, M.A. (author), Vandalon, V. (author), Mameli, A. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)
An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) process for SiO2 using bisdiethylaminosilane (BDEAS, SiH2[NEt2]2) and O2 plasma is reported along with an investigation of its underlying growth mechanism. Within the temperature range of 100−250 °C, the process demonstrates self-limiting growth with a growth per...
article 2021
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Mameli, A. (author), Brüner, P. (author), Roozeboom, F. (author), Grehl, T. (author), Poodt, P. (author)
public lecture 2020
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Ameen, M. (author), Beeker, I. (author), Haverkate, L. (author), Anothumakkool, B. (author), Grob, B. (author), Hermes, D. (author), Huijssen, N. (author), Khandan Del, S. (author), Roozeboom, F. (author), Unnikrishnan, S. (author)
public lecture 2020
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Ameen, M. (author), Poplawski, M. (author), Haverkate, L. (author), Grob, F. (author), Anothumakkool, B. (author), Hermes, D. (author), del Khandan, S. (author), Roozeboom, F. (author), Unnikrishnan, S. (author)
public lecture 2019
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Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)
Area-selective atomic layer deposition (AS-ALD) has the potential for pushing device manufacturing towards new frontiers. However, the selectivity that can be obtained is often very limited and the throughput of most AS-ALD methods is low, which hampers its industrial acceptance.[1,2] In this work, we present a process for AS-ALD of SiO2 using...
public lecture 2019
document
Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)
public lecture 2019
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Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)
public lecture 2019
document
Mione, M.A. (author), Creyghton, Y. (author), Engeln, R. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)
public lecture 2019
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Mione, M.A. (author), Engeln, R. (author), Vandalon, V. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)
public lecture 2019
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Mione, M.A. (author), Engeln, R. (author), Vandalon, V. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)
Atmospheric-pressure Plasma-Enhanced spatial Atomic Layer Deposition (PE-s-ALD) is a high-throughput technique for synthesizing thin films at low temperatures for large area applications. The spatial separation of the ALD half-reactions and the use of an atmospheric pressure plasma as the reactant give rise to complex surface chemistry which is...
article 2019
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Mione, M.A. (author), Creyghton, Y. (author), Engeln, R. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)
conference paper 2018
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Zardetto, V. (author), Senes, A. (author), Najafi, M. (author), Zhang, D. (author), Joly, R. (author), Chippari, M. (author), Arneouts, T. (author), Poodt, P. (author), Veenstra, S. (author), Andriessen, R. (author)
In order to bring the organo-lead halide perovskite solar cells (PSC) towards the commercialization, the device stability needs to be drastically improved. Our approach relies on the introduction of a compact metal oxide (MeO) layer in a p-i-n planar architecture by means of atmospheric pressure spatial atomic layer deposition (s-ALD) technique....
conference paper 2018
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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Gelinck, G. (author)
In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In þ Zn)...
article 2018
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Najafi, M. (author), Zardetto, V. (author), Zhang, D. (author), Koushik, D. (author), Dorenkamper, M.S. (author), Creatore, M. (author), Andriessen, R. (author), Poodt, P. (author), Veenstra, S. (author)
The replacement of the conventional top metal contact with a semi-transparent conducting electrode such as sputtered indium-tin oxide (ITO) is strictly required to adopt the perovskite solar cell (PSC) in hybrid tandem photovoltaic applications. In order to prevent sputtering damages on the perovskite absorber and the organic materials adopted...
article 2018
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Frijters, C. (author), van den Bruele, F. (author), Grob, F. (author), Illiberi, A. (author), Creyghton, Y. (author), Roozeboom, F. (author), Poodt, P. (author)
public lecture 2017
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Illiberi, A. (author), Katsouras, I. (author), Gazibegovic, S. (author), Cobb, B. (author), Nekovic, E. (author), van Boekel, W. (author), Frijters, C. (author), Maas, J. (author), Roozeboom, F. (author), Creyghton, Y. (author), Poodt, P. (author), Gelinck, G. (author)
public lecture 2017
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