The operational mechanism of ferroelectric-driven organic resistive switches

The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic...

Charge transport and recombination in polyspirobifluorene blue light-emitting diodes

The charge transport in blue light-emitting polyspirobifluorene is investigated by both steady-state current-voltage measurements and transient electroluminescence. Both measurement techniques yield consistent results and show that the hole transport is space-charge limited. The electron current is found to be governed by a high intrinsic...

Retention time and depolarization in organic nonvolatile memories based on ferroelectric semiconductor phase-separated blends

Resistive switches have been fabricated using a phase-separated blend film of ferroelectric random copolymer poly(vinylidene fluoride-co-trifluoroethylene) with the organic semiconductor regio-irregular poly(3-hexylthiophene) (rir-P3HT). Spin-coated blend films have been contacted with symmetrical Ag top and Ag bottom electrodes, yielding...