Searched for: subject:"Silicon%5C+nitride"
(1 - 8 of 8)
document
Yamaguchi, S. (author), van Aken, B.B. (author), Stodolny, M.K. (author), Loffler, J. (author), Masuda, A. (author), Ohdaira, K. (author)
System voltages can cause significant degradation in photovoltaic modules. Polarization-type potential-induced degradation (PID) is accompanied by decreases in the short-circuit current density and the open-circuit voltage. The system voltage causes a polarization and surface charge accumulation, increasing the interface recombination. The...
article 2021
document
Stoevelaar, L.P. (author), Cernigoj, J. (author), Berzinš, J. (author), Silvestri, F. (author), Gerini, G. (author)
In this paper, an all-dielectric metasurface for surface enhanced Raman spectroscopy (SERS) is presented. The proposed design constitutes of an array of silicon (Si) dimers on top of thin film of silicon nitride (SiN), deposited on a glass substrate. The coupling mechanism between the dimers is based on two orthogonal guided waves in the SiN...
conference paper 2019
document
van de Weijer, P. (author), Akkerman, H.B. (author)
In order to protect a flexible OLED on plastic foil against water from the ambient atmosphere a top and bottom thin-film encapsulation (TFE) is necessary. A TFE stack SiN-OCP-SiN with getter in OCP results in excellent shelf lifetime. However, the getter particles result in light scattering that is lost upon water ingress in the stack. As a...
article 2019
document
Janssen, G.J.M. (author), Stodolny, M.K. (author), van Aken, B.B. (author), Loffler, J. (author), Lamers, M.W.P.E. (author), Tool, C.J.J. (author), Romijn, I.G. (author)
Potential-induced degradation in n-type modules is typically associated with a surface polarization effect. This paper shows that modifications at the cell level can minimize the potential-induced degradation of modules caused by a polarization effect. As is demonstrated on n-PERT cells, the potentialinduced degradation can be reduced...
article 2019
document
Van Assche, F.J.H. (author), Unnikrishnan, S. (author), Michels, J.J. (author), van Mol, A.M.B. (author), van de Weijer, P. (author), van de Sanden, M.C.M. (author), Creatore, M. (author)
We report on a low substrate temperature (110°C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic photovoltaic cells (OPVs). Specifically, the influence of the SiH4...
article 2014
document
Bechtold, T. (author), Hohlfeld, D. (author), Rudnyi, E.B. (author), Günther, M. (author)
In this paper we present a novel highly efficient approach to determine material properties from measurement results. We apply our method to thermal properties of thin-film multilayers with three different materials, amorphous silicon, silicon nitride and silicon oxide. The individual material properties are identified by solving an optimization...
article 2010
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van Assche, F.J.H. (author), Rooms, H.C.A. (author), Young, E.W.A. (author), Michels, J. (author), van Mol, A.M.B. (author), Rietjens, G. (author), van de Weijer, P. (author), Bouten, P. (author), TNO Industrie en Techniek (author)
Within the Holst centre a transparent barrier on foil has been under development which is based on low-temperature plasma deposited silicon nitride films as intrinsic moisture barrier, stacked with planarization layers to spatially separate defects in these films. OLED lifetime testing and water vapor transmission rate measurements using a Ca...
conference paper 2008
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Kudyba-Jansen, A. (author), Almeida, M. (author), Laven, J. (author), van der Heijde, J.C.T. (author), Hintzen, H.T. (author), Metselaar, R. (author), TNO Industrie (author)
Properties of carbothermally prepared Ca-α-SiAlON and β-SiAlON powders and aqueous suspensions thereof were determined. The isoelectric points of Ca-α-SiAlON and β-SiAlON were 3·4 and 4·6. After addition of deflocculant, Dolapix CE64, the behaviour of both suspensions is nearly identical. The isoelectric points become 5·5 and 5·3, respectively....
article 1999
Searched for: subject:"Silicon%5C+nitride"
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