Searched for: subject%3A%22Semiconducting%255C%2Bgallium%22
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document
Sberna, P.M. (author), Bernardis, A.F. (author), Garufo, A. (author), Bueno, J. (author), Llombart, N. (author), Neto, A. (author)
Photo-conductive lens antennas (PCAs) exploit the ultra-short photoconductivity phenomenon of specific semiconductors in order to generate pulsed radiation in the THz regime. State of the art PCAs suffer from high dispersion and low radiation efficiency over the large generated bandwidth due to the poor coupling between the antenna and the...
conference paper 2021
document
van der Bent, G. (author), de Hek, P. (author), van Vliet, F.E. (author)
The application of stacked-FETs in power ampli fiers allows for a supply voltage higher than supported by the breakdown voltage of a single transistor. Potential benefits of the increased supply voltage are reduced supply currents and a lower matching ratio at the output of the amplifier. Furthermore, an increased output power per chip area is...
article 2019
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TNO Defensie en Veiligheid (author), Maas, A.P.M. (author), Janssen, J.P.B. (author), van Vliet, F.E. (author)
A set of X-band absorptive limiter GaAs MMICs has been designed and realised using both the PPH25x foundry process from UMS and the PP50-10 process from WIN semiconductors. The innovative limiter concepts have been extensively characterised by both pulsed and CW measurements. Both passive and active topologies have been implemented. The passive...
conference paper 2007
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TNO Defensie en Veiligheid (author), van Wanum, M. (author), van der Bent, G. (author), Rodenburg, M. (author), de Hek, A.P. (author)
Robust digital control logic for a X-band fivebit digital attenuator and six-bit phase shifter has been developed and tested. The circuit uses an innovative combination of feedback and feed forward. The devices have been developed in the 6-inch 0.5 um power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process results in cost...
conference paper 2006
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TNO Defensie en Veiligheid (author), Maas, A.M.P. (author), Hoogland, J.A. (author)
Using the 0.15 um GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have been designed, processed and measured. Both designs include a LO buffer amplifier to allow for a reduced external LO power level. With an LO power of +10 dBm, the measured RF input match is better than -15 dB at 60 GHz and the conversion loss is...
conference paper 2005
Searched for: subject%3A%22Semiconducting%255C%2Bgallium%22
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