Searched for: subject%3A%22Scanning%255C%2BKelvin%255C%2Bprobe%255C%2Bmicroscopy%22
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Kam, B. (author), Li, X. (author), Cristoferi, C. (author), Smits, E.C.P. (author), Mityashin, A. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top...
article 2012
document
Gholamrezaie, F. (author), Andringa, A.-M. (author), Roelofs, W.S.C. (author), Neuhold, A. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which...
article 2012
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Li, X. (author), Smaal, W.T.T. (author), Kjellander, C. (author), van der Putten, B. (author), Gualandris, K. (author), Smits, E.C.P. (author), Anthony, J. (author), Broer, D.J. (author), Blom, P.W.M. (author), Genoe, J. (author), Gelinck, G.H. (author)
We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we...
article 2011
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Charrier, D.S.H. (author), de Vries, T. (author), Mathijssen, S.G.J. (author), Geluk, E.-J. (author), Smits, E.C.P. (author), Kemerink, M. (author), Janssen, R.A.J. (author), TNO Industrie en Techniek (author)
In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy (SKPM). However, surface potentials as measured by...
article 2009
Searched for: subject%3A%22Scanning%255C%2BKelvin%255C%2Bprobe%255C%2Bmicroscopy%22
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