Searched for: subject%3A%22Quantum%255C%2Bconfinement%22
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Kulesh, I. (author), Ke, C.T. (author), Thomas, C. (author), Karwal, S. (author), Moehle, C.M. (author), Metti, S. (author), Kallaher, R. (author), Gardner, G.C. (author), Manfra, M.J. (author), Goswami, S. (author)
Indium-antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, a strong spin-orbit interaction, a large Landé g factor, and a small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological...
article 2020
Muhammed, M.A.H. (author), Lamers, M. (author), Baumann, V. (author), Dey, P. (author), Blanch, A.J. (author), Polishchuk, I. (author), Kong, X.T. (author), Levy, D. (author), Urban, A.S. (author), Govorov, A.O. (author), Pokroy, B. (author), Rodríguez-Fernández, J. (author), Feldmann, J. (author)
Elucidating the underlying principles behind band gap engineering is paramount for the successful implementation of semiconductors in photonic and optoelectronic devices. Recently it has been shown that the band gap of a wide and direct band gap semiconductor, such as ZnO, can be modified upon cocrystallization with amino acids, with the role of...
article 2018