Microscale diagnostics of Atmospheric Pressure Plasma-Enhanced Spatial Atomic Layer Deposition

Monolithic two-terminal hybrid a-Si:H/CIGS tandem cells

Copper-indium-gallium-di-selenide (CIGS) is the present record holder in lab-scale thin-film photovoltaics (TF-PV). One of the problems of this PV technology is the scarcity of indium. Multi-junction solar cells allow better spectral utilization of the light spectrum, while the required current generation per layer is much lower, allowing much...

Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO2 for Low-Temperature, Large-Area Applications

High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...

Monolithic two-terminal hybrid a-Si:H/CIGS tandem cells

Copper-indium-gallium-di-selenide (CIGS) is the present record holder in lab-scale thin-film photovoltaics (TFPV). One of the problems of this PV technology is the scarcity of indium. Multi-junction solar cells allow better spectral utilization of the light spectrum, while the required current generation per layer is much lower, allowing much...

On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

We report on a low substrate temperature (110°C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic photovoltaic cells (OPVs). Specifically, the influence of the SiH4...

High-throughput processes for industrially scalable deposition of zinc oxide at atmospheric pressure

ZnO films have been grown on a moving glass substrate by high temperature (480 0C) chemical vapour deposition (CVD) and low temperature (200 0C) plasma enhanced CVD (PE-CVD) process at atmospheric pressure. Deposition rates above 7 nm/s have been achieved for substrate speeds from 20 to 500 mm/min. The conductivity of the films is enhanced by Al...

High rate (∼7 nm/s), atmospheric pressure deposition of ZnO front electrode for Cu(In,Ga)Se2 thin-film solar cells with efficiency beyond 15%

Undoped zinc oxide (ZnO) films have been grown on a moving glass substrate by plasma-enhanced chemical vapor deposition at atmospheric pressure. High deposition rates of ∼7 nm/s are achieved at low temperature (200°C) for a substrate speed from 20 to 60 mm/min. ZnO films are highly transparent in the visible range (90%). By a short (∼minute)...

Fluorocarbon coatings deposited on micron-sized particles by atmospheric PECVD

Fluorocarbon coatings have been deposited on micron-sized silica particles by means of atmospheric pressure plasma-enhanced chemical vapor deposition (PECVD). The silica particles have a diameter in the range between 40 and 70 ?m. They are fluidized at atmospheric pressure in a circulating fluidized bed combined with a dielectric barrier...

The potential of nano-structured silicon oxide type coatings deposited by PACVD for control of aquatic biofouling

SiOx-like coatings were deposited on glass slides from a hexamethylsiloxane precursor by plasma-assisted CVD (PACVD). Surface energies (23.1-45.7 mJ m-1) were correlated with the degree of surface oxidation and hydrocarbon contents. Tapping mode AFM revealed a range of surface topologies with Ra values 1.55-3.16 nm and RMS roughness 1.96-4.11 nm...

Development of APCVD process for high quality TCO

For the past decade TNO has been involved in the research and development of atmospheric pressure CVD (APCVD) and plasma enhanced CVD (PECVD) processes for deposition of transparent conductive oxides (TCO), such as tin oxide and zinc oxide. The use of atmospheric deposition processes allows for large scale roll to roll manufacturing, and is...