Searched for: subject%3A%22Oxide%255C%2Blayer%22
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Nguyen, M.D. (author), Nazeer, H. (author), Karakaya, K. (author), Pham, S.V. (author), Steenwelle, R. (author), Dekkers, M. (author), Abelmann, L. (author), Blank, D.H.A. (author), Rijnders, G. (author), TNO Industrie en Techniek (author)
This paper reports on the piezoelectric-microelectromechanical system micro-fabrication process and the behavior of piezoelectric stacks actuated silicon cantilevers. All oxide layers in the piezoelectric stacks, such as buffer-layer/bottom-electrode/film/top-electrode: YSZ/SrRuO\3/Pb(Zr, Ti)\3/SrRuO\3, were grown epitaxially on the Si template...
article 2010
Kudryavtsev, Y.V. (author), Gelinck, E.R.M. (author), Fischer, H.R. (author), TNO Industrie en Techniek (author)
A theoretical investigation of van der Waals forces acting between two solid silicon surfaces at separations from zero to approximately 20 nm is presented. We focused our efforts on the analysis of different factors that can cause deviations from the classical pressure-distance dependence p ∼ 1/D3. It is demonstrated that a layer (oxide or water...
article 2009