Searched for: subject%3A%22Organic%255C%2Btransistor%22
(1 - 12 of 12)
document
Yoo, H. (author), Lee, S.B. (author), Lee, D.-K. (author), Smits, E.C.P. (author), Gelinck, G.H. (author), Cho, K. (author), Kim, J.-J. (author)
Split-gate ambipolar organic transistor technology is gaining interests as a practical solution for the implementation of complementary transistors. It is known that conventional ambipolar transistors suffer from poor DC gain, noise margin, and high power consumption, as they do not have a well-defined off-state region. A split-gate device...
article 2018
document
Ke, T.H. (author), Müller, R. (author), Kam, B. (author), Rockele, M. (author), Chasin, A. (author), Myny, K. (author), Steudel, S. (author), Oosterbaan, W.D. (author), Lutsen, L. (author), Genoe, J. (author), van Leuken, L. (author), van der Putten, B. (author), Heremans, P. (author)
In this work, we realize complementary circuits with organic p-type and n-type transistor integrated on polyethylene naphthalate (PEN) foil. We employ evaporated p-type and n-type organic semiconductors spaced side by side in bottom-contact bottom-gate coplanar structures with channel lengths of 5 μm. The area density is 0.08 mm2 per...
article 2014
document
Gelinck, G.H. (author), Kumar, A. (author), Moet, D. (author), van der Steen, J.L. (author), Shafique, U. (author), Malinowski, P.E. (author), Myny, K. (author), Rand, B.P. (author), Simon, M. (author), Rütten, W. (author), Douglas, A. (author), Jorritsma, J. (author), Heremans, P.L. (author), Andriessen, H.A.J.M. (author)
We describe the fabrication and characterization of large-area active-matrix X-ray/photodetector array of high quality using organic photodiodes and organic transistors. All layers with the exception of the electrodes are solution processed. Because it is processed on a very thin plastic substrate of 25 mu;m thickness, the photodetector is only...
article 2013
document
Kjellander, B.K.C. (author), Smaal, W.T.T. (author), Myny, K. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), Gelinck, G.H. (author)
We ink-jet print a blend of 6,13-bis(triisopropyl-silylethynyl)pentacene and polystyrene as the active layer for flexible circuits. The discrete ink-jet printed transistors exhibit a saturation mobility of 0.5 cm2 V -1 s-1. The relative spread in transistor characteristics can be very large. This spread is due to the morphology of the TIPS-PEN...
article 2013
document
Smaal, W. (author), Kjellander, C. (author), Jeong, Y. (author), Tripathi, A.K. (author), van der Putten, B. (author), Facchetti, A. (author), Yan, H. (author), Quinn, J. (author), Anthony, J. (author), Myny, K. (author), Dehaene, W. (author), Gelinck, G.H. (author)
article 2012
document
Li, X. (author), Kadashchuk, A. (author), Fishchuk, I.I. (author), Smaal, W.T.T. (author), Gelinck, G.H. (author), Broer, D.J. (author), Genoe, J. (author), Heremans, P. (author), Bässler, H. (author)
While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low source-drain fields. Corroborated by scanning Kelvin...
article 2012
document
Myny, K. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author)
Dual-gate organic transistor technology is used to increase the robustness of digital circuits as illustrated by higher inverter gains and noise margins. The additional gate in the technology functions as a VT-control gate. Both zero-VGS-load and diode-load logic are investigated. The noise margin of zero- VGS-load inverter increases from 1.15 V...
article 2011
document
James, D.T. (author), Kjellander, B.K.C. (author), Smaal, W.T.T. (author), Gelinck, G.H. (author), Combe, C. (author), McCulloch, I. (author), Wilson, R. (author), Burroughes, J.H. (author), Bradley, D.D.C. (author), Kim, J.S. (author)
We report thin-film morphology studies of inkjet-printed single-droplet organic thin-film transistors (OTFTs) using angle-dependent polarized Raman spectroscopy. We show this to be an effective technique to determine the degree of molecular order as well as to spatially resolve the orientation of the conjugated backbones of the 6,13-bis...
article 2011
document
Li, X. (author), Smaal, W.T.T. (author), Kjellander, C. (author), van der Putten, B. (author), Gualandris, K. (author), Smits, E.C.P. (author), Anthony, J. (author), Broer, D.J. (author), Blom, P.W.M. (author), Genoe, J. (author), Gelinck, G.H. (author)
We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we...
article 2011
document
Gelinck, G.H. (author), Heremans, P. (author), Nomoto, K. (author), Anthopoulos, T.D. (author), TNO Industrie en Techniek (author)
Organic thin-film transistors (OTFTs) offer unprecedented opportunities for implementation in a broad range of technological applications spanning from large-volume microelectronics and optical displays to chemical and biological sensors. In this Progress Report, we review the application of organic transistors in the fields of flexible optical...
article 2010
document
Kjellander, B.K.C. (author), Smaal, W.T.T. (author), Anthony, J.E. (author), Gelinck, G.H. (author), TNO Industrie en Techniek (author)
We present an approach to inkjet print high-performance organic transistors by printing the organic semiconductor ink on a thin, continuous, and solvent-absorbing layer of insulating material. The ink spreading is effectively controlled by local dissolution of the layer, and during drying the characteristic circular morphology with high rims and...
article 2010
document
Debucquoy, M. (author), Rockelé, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold...
article 2009
Searched for: subject%3A%22Organic%255C%2Btransistor%22
(1 - 12 of 12)