Searched for: subject%3A%22Organic%255C%2Bfield%255C-effect%255C%2Btransistor%22
(1 - 12 of 12)
document
Dogan, T. (author), Verbeek, R. (author), Kronemeijer, A.J. (author), Bobbert, P.A. (author), Gelinck, G.H. (author), van der Wiel, W.G. (author)
A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm...
article 2019
document
Asadi, K. (author), Katsouras, I. (author), Harkema, J. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Biscarini, F. (author), Blom b, P.W.M. (author), de Leeuw, D.M. (author)
The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the transmission line measurements in transistors with...
article 2012
document
Kam, B. (author), Li, X. (author), Cristoferi, C. (author), Smits, E.C.P. (author), Mityashin, A. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top...
article 2012
document
Gholamrezaie, F. (author), Andringa, A.-M. (author), Roelofs, W.S.C. (author), Neuhold, A. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which...
article 2012
document
Brondijk, J.J. (author), Spijkman, M. (author), Torricelli, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The charge carrier distribution in dual-gate field-effect transistors is investigated as a function of semiconductor thickness. A good agreement with 2-dimensional numerically calculated transfer curves is obtained. For semiconductor thicknesses larger than the accumulation width, two spatially separated channels are formed. The cross-over from...
article 2012
document
Brondijk, J.J. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model is presented that describes the charge...
article 2012
document
Gholamrezaie, F. (author), Asadi, K. (author), Kicken, R.A.H.J. (author), Langeveld-Voss, B.M.W. (author), de Leeuw, D.M. (author), Blom, P.W.M. (author)
We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By...
article 2011
document
Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Staggered bottom-contact top-gate organic ferroelectric field-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)(2,4,6- trimethylphenyl)amine] as semiconductor. Polarization reversal of the ferroelectric gate is monitored by displacement transients in the...
article 2011
document
Li, X. (author), Smaal, W.T.T. (author), Kjellander, C. (author), van der Putten, B. (author), Gualandris, K. (author), Smits, E.C.P. (author), Anthony, J. (author), Broer, D.J. (author), Blom, P.W.M. (author), Genoe, J. (author), Gelinck, G.H. (author)
We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we...
article 2011
document
Maddalena, F. (author), Meijer, E.J. (author), Asadi, K. (author), de Leeuw, D.M. (author), Blom, P.W.M. (author), TNO Industrie en Techniek (author)
The kinetics of acid doping of the semiconductor regioregular poly-3-hexylthiophene with vaporized chlorosilane have been investigated using field-effect transistors. The dopant density has been derived as a function of temperature and exposure time from the shift in the pinch-off voltage, being the gate bias where current starts to flow. The...
article 2010
document
Gholamrezaie, F. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Geuns, T.C.T. (author), van Hal, P.A. (author), Ponomarenko, S.A. (author), Flesch, H.-G. (author), Resel, R. (author), Cantatore, E. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
We report on a two-dimensional highly ordered self-assembled monolayer (SAM) directly grown on a bare polymer surface. Semiconducting SAMs are utilized in field-effect transistors and combined into integrated circuits as 4-bit code generators. The driving force to form highly ordered SAMs is packing of the liquid crystalline molecules caused by...
article 2010
document
Charrier, D.S.H. (author), de Vries, T. (author), Mathijssen, S.G.J. (author), Geluk, E.-J. (author), Smits, E.C.P. (author), Kemerink, M. (author), Janssen, R.A.J. (author), TNO Industrie en Techniek (author)
In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy (SKPM). However, surface potentials as measured by...
article 2009
Searched for: subject%3A%22Organic%255C%2Bfield%255C-effect%255C%2Btransistor%22
(1 - 12 of 12)