Searched for: subject%3A%22Non%255C-volatile%255C%2Bmemories%22
(1 - 10 of 10)
document
Gelinck, G.H. (author), Cobb, B. (author), van Breemen, A.J.J.M. (author), Myny, K. (author)
Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading...
article 2015
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van Breemen, A.J.J.M. (author), Zaba, T. (author), Khikhlovskyi, V. (author), Michels, J. (author), Janssen, R. (author), Kemerink, M. (author), Gelinck, G. (author)
The polymer phase separation of P(VDF-TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase-separating mixture of P(VDF-TrFE) and F8BT in a thin film into a highly ordered 2D lattice by...
article 2015
document
Li, M. (author), Stingelin, N. (author), Michels, J.J. (author), Spijkman, M.-J. (author), Asadi, K. (author), Beerends, R. (author), Biscarini, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The processing of solution-based binary blends of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) and the semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) applied by spin-coating and wire-bar coating is investigated. By systematic variation of blend composition, solvent, and deposition...
article 2012
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Brondijk, J.J. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model is presented that describes the charge...
article 2012
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Asadi, K. (author), Wondergem, H.J. (author), Moghaddam, R.S. (author), McNeill, C.R. (author), Stingelin, N. (author), Noheda, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The operation of resistive switches based on phase-separated blends of organic ferroelectrics and semiconductors depends significantly on the microstructure of such systems. A wide range of analysis techniques are used to characterize spin-coated films of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)...
article 2011
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Tripathi, A.K. (author), van Breemen, A.J.J.M. (author), Shen, J. (author), Gao, Q. (author), Ivan, M.G. (author), Reimann, K. (author), Meinders, E.R. (author), Gelinck, G.H. (author)
Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by...
article 2011
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Asadi, K. (author), Li, M. (author), Blom, P.W.M. (author), Kemerink, M. (author), de Leeuw, D.M. (author)
Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto...
article 2011
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Asadi, K. (author), Wildeman, J. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Resistive switches have been fabricated using a phase-separated blend film of ferroelectric random copolymer poly(vinylidene fluoride-co-trifluoroethylene) with the organic semiconductor regio-irregular poly(3-hexylthiophene) (rir-P3HT). Spin-coated blend films have been contacted with symmetrical Ag top and Ag bottom electrodes, yielding...
article 2010
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Naber, R.C.G. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), de Boer, B. (author), TNO Industrie en Techniek (author)
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important...
article 2010
document
Mcneill, C.R. (author), Asadi, K. (author), Watts, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
The phase-separated structure of blends of the ferroelectric polymer P(VDF-TrFE) and the semiconducting polymer P3HT used in organic non-volatile memories is revealed with soft X-ray spectromicroscopy. These thin-film blends show a columnar morphology, with P3HT-rich columns enclosed in a continuous, essentially pure P(VDF-TrFE) phase favorable...
article 2010
Searched for: subject%3A%22Non%255C-volatile%255C%2Bmemories%22
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