Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices

We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field, and junction transparencies. Identifying the lowest-energy state allows for the...

Gate-Tunable Field-Compatible Fluxonium

Fine printing method of silver nanowire electrodes with alignment and accumulation

One-dimensional metal nanowires offer great potential in printing transparent electrodes for next-generation optoelectronic devices such as flexible displays and flexible solar cells. Printing fine patterns of metal nanowires with widths <100 ?m is critical for their practical use in the devices. However, the fine printing of metal nanowires...

Isotropic ALE of ZnO using Hacac and O2 plasma

Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks

Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques...

Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma

Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma processes yielding anisotropic (or directional) etch profiles...

Isotropic Atomic Layer Etching of ZnO on 2D and 3D substrates, using acetylacetone and O2 plasma

Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma processes yielding anisotropic (or directional) etch profiles...

Feasibility study of photo thermal acoustic imaging of buried nanowires in Gate-All-Around Nanowire FETs

Hard superconducting gap in InSb nanowires

Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap,...

Perspectives of Atomic Layer Etching and related processing

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating...

Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer

Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one...

Thermo-mechanical challenges for quantum devices

In the last few years Technical University of Delft, under leadership of Prof.dr.ir. Leo Kouwenhoven, has developed several successful concepts for quantum devices that are suitable for quantum computing and quantum communication. From a quantum research point of view we are still in a very fundamental state, several practical issues already...

Nanowire-based gas sensors

Gas sensors fabricated with nanowires as the detecting elements are powerful due to their many improved characteristics such as high surface-to-volume ratios, ultrasensitivity, higher selectivity, low power consumption, and fast response. This paper gives an overview on the recent process of the development of nanotechnology and nanowire-based...

Functionalized vertical InAs nanowire arrays for gas sensing

Vertical InAs nanowires are contacted in situ using an air-bridge construction and functionalized with a metalloporphyrin (Hemin). The response of bare and functionalized vertical InAs nanowire arrays to ppb-level concentrations of NO2 and NO is demonstrated. Hemin enhances the response to NO whereas NO2 is also detected without...

Micro and nanopatterning of functional materials on flexible plastic substrates via site-selective surface modification using oxygen plasma

A simple and cost effective methodology for large area micro and nanopatterning of a wide range of functional materials on flexible substrates is presented. A hydrophobic-hydrophilic chemical contrast was patterned on surfaces of various flexible plastic substrates using molds and shadow masks with which selected areas of the substrate surface...

Gas sensing with vertical functionalized InAs nanowire arrays

Nanowires show great promise for use in next generation (bio-)chemical sensing devices because of their high surface to volume ratio enabling efficient modulation of their current by charges or dipoles present at the surface. Here, we present a gas sensing device based on vertical InAs nanowire arrays grown without metal catalyst particles. The...

Ultralow-power hydrogen sensing with single palladium nanowires

Palladium nanowires were fabricated on silicon substrates using conventional microfabrication techniques. Sensors based on such nanowires show a reversible response to hydrogen concentrations as low as 27 ppm with response times varying from 5 s (H2 concentrations >20%) to 30 s (H2 concentrations <100 ppm) at room temperature. The response times...