Searched for: subject%3A%22Monolithic%255C%2Bmicrowave%255C%2Bintegrated%255C%2Bcircuits%22
(1 - 10 of 10)
document
van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
conference paper 2016
document
van Heijningen, M. (author), van der Bent, G. (author), Rodenburg, M. (author), van Vliet, F.E. (author), Quay, R. (author), Br├╝ckner, P. (author), Schwantuschke, D. (author), Jukkala, P. (author), Narhi, T. (author)
Solid-state power amplifiers at W-band (75 - 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications there is a growing interest for these devices in...
conference paper 2012
document
Quay, R. (author), Maroldt, S. (author), Haupt, C. (author), van Heijningen, M. (author), Tessmann, A. (author), TNO Defensie en Veiligheid (author)
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The measured output power of several dual-stage GaN...
article 2009
document
van Heijningen, M. (author), Janssen, J.P.B. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)
Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch design shows a 1 dB compression point of 43...
article 2009
document
TNO Defensie en Veiligheid (author), Maas, A.P.M. (author), Janssen, J.P.B. (author), van Vliet, F.E. (author)
A set of X-band absorptive limiter GaAs MMICs has been designed and realised using both the PPH25x foundry process from UMS and the PP50-10 process from WIN semiconductors. The innovative limiter concepts have been extensively characterised by both pulsed and CW measurements. Both passive and active topologies have been implemented. The passive...
conference paper 2007
document
TNO Defensie en Veiligheid (author), van Vliet, F.E. (author), de Boer, A. (author), Visser, G.C. (author)
This paper presents very recent achievements in the Silicon implementation of phase and amplitude control for active electronically steered arrays. The IC combines 6-bit amplitude control with more than 20 dB amplitude range, including control logic and series-to-parallel converters. The IC is a step forward in lowering active array cost and...
conference paper 2007
document
TNO Defensie en Veiligheid (author), van Wanum, M. (author), van der Bent, G. (author), Rodenburg, M. (author), de Hek, A.P. (author)
Robust digital control logic for a X-band fivebit digital attenuator and six-bit phase shifter has been developed and tested. The circuit uses an innovative combination of feedback and feed forward. The devices have been developed in the 6-inch 0.5 um power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process results in cost...
conference paper 2006
document
TNO Defensie en Veiligheid (author), van Heijningen, M. (author), van Vliet, F.E. (author), Quay, R. (author), van Raay, F. (author), Kiefer, R. (author), Mueller, S. (author), Krausse, D. (author), Seelmann-Eggebert, M. (author), Mikulla, M. (author), Schlechtweg, M. (author)
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 um thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28...
conference paper 2005
document
TNO Defensie en Veiligheid (author), Maas, A.M.P. (author), Hoogland, J.A. (author)
Using the 0.15 um GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have been designed, processed and measured. Both designs include a LO buffer amplifier to allow for a reduced external LO power level. With an LO power of +10 dBm, the measured RF input match is better than -15 dB at 60 GHz and the conversion loss is...
conference paper 2005
document
van Heijningen, M. (author), Friday, J. (author)
In this paper a novel low-cost SMD package for high-power MMICs is presented. Due to the special design this package has a very low thermal resistance and low parasitic ground inductance. 3D EM simulations of a packaged through-line correspond well with measurements. Measurement results of a 1 Watt 40 GHz HPA before and after packaging are...
conference paper 2004
Searched for: subject%3A%22Monolithic%255C%2Bmicrowave%255C%2Bintegrated%255C%2Bcircuits%22
(1 - 10 of 10)