Pages
- 1
- 2
- document
-
Jo, Y. (author), Kwon, J. (author), van der Steen, J.L.J. (author), A. Kronemeijer, A. (author), Jung, S. (author)Here, we present a pseudo-CMOS NOR gate array based on dual-gate amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) on plastic. We fabricated a 14 × 12 array of NOR gates which was programmed using laser-induced forward transfer printing technology to realize a negative-edge-triggered D flip-flop. Two drive transistors in a...article 2021
- document
-
Theelen, M.J. (author), Hagedoorn, C. (author), Götz-Köhler, M. (author), Weeber, A. (author), Neugebohn, N. (author)Oxide/metal/oxide (OMO) layer stacks are promising replacements for conventional transparent conductive oxides in thin-film photovoltaics. They can provide colouration of the solar cells by adjusting their thickness to optimised optical resonances. Green OMO multistacks were deposited on glass by subsequent sputtering of aluminium doped zinc...article 2021
- document
- Sen, M. (author), Bronsveld, P.C.P. (author), Weeber, A.W. (author) article 2021
- document
-
Lawrie, W.I.L. (author), Eenink, H.G.J. (author), Hendrickx, N.W. (author), Boter, J.M. (author), Petit, L. (author), Amitonov, S.V. (author), Lodari, M. (author), paquelet Wuetz, B. (author), Volk, C. (author), Philips, S.G.J. (author), Droulers, G. (author), Kalhor, N. (author), van Riggelen, F. (author), Brousse, D. (author), Sammak, A. (author), Vandersypen, L.M.K. (author), Scappucci, G. (author), Veldhorst, M. (author)Electrons and holes confined in quantum dots define excellent building blocks for quantum emergence, simulation, and computation. Silicon and germanium are compatible with standard semiconductor manufacturing and contain stable isotopes with zero nuclear spin, thereby serving as excellent hosts for spins with long quantum coherence. Here, we...article 2020
- document
-
Verschueren, L. (author), Ameys, M. (author), Lopez, M.V. (author), Smout, S. (author), Ke, T.H. (author), Vandenplas, E. (author), Kronemeijer, A.J. (author), Heremans, P. (author), Genoe, J. (author), Dehaene, W. (author), Myny, K. (author)This paper presents a new compensation principle using a 2T1C pixel circuit. The implementation shows significant improvement in uniformity for all grey-levels, due to compensation for both VT and β-factor variations. The resulting current variation after compensation in the characterized display area reaches values down to 0.079%.conference paper 2020
- document
-
Papadopoulos, N. (author), Celiker, H. (author), Qiu, W. (author), Ameys, M. (author), Smout, S. (author), Willegems, M. (author), Deroo, F. (author), Steen, J.-L. (author), Kronemeijer, A.J. (author), Dehouwer, M. (author), Mityashin, A. (author), Gehlhaar, R. (author), Dehaene, W. (author), Myny, K. (author)In this work, we demonstrate a capacitive coupled data transfer with flexible thin-film electronics using touchscreen as ubiquitous reader interface. The capacitive communication to the touchscreen is proven using a 64-bit metal-oxide thin-film capacitive-coupled identification tag. The tag is powered by a thin film battery or thin-film...conference paper 2020
- document
- Kronemeijer, A.J. (author), Akkerman, H. (author), van der Steen, J.L. (author), Steudel, S. (author), Pendyala, R. (author), Panditha, P. (author), Bel, T. (author), van Diesen, K. (author), de Haas, G. (author), Maas, J. (author), de Riet, J. (author), Rovers, M. (author), Verbeek, R. (author), Nag, M. (author), Verschueren, L. (author), Genoe, J. (author), Dehaene, W. (author), Lu, Y.J. (author), Chiang, S.C. (author), Huang, Y.Y. (author), Yeh, M.H. (author), Gelinck, G. (author) conference paper 2018
- document
-
Najafi, M. (author), Di Giacomo, F. (author), Zhang, D. (author), Shanmugam, S. (author), Senes, A. (author), Verhees, W. (author), Hadipour, A. (author), Galagan, Y. (author), Aernouts, T. (author), Veenstra, S. (author), Andriessen, R. (author)In this study, the fabrication of highly efficient and durable flexible inverted perovskite solar cells (PSCs) is reported. Presynthesized, solution-derived NiOx and ZnO nanoparticles films are employed at room temperature as a hole transport layer (HTL) and electron transport layer (ETL), respectively. The triple cation perovskite films are...article 2018
- document
-
Dankers, A.C.A. (author), Kuper, C.F. (author), Boumeester, A.J. (author), Fabriek, B.O. (author), Kooter, I.M. (author), Gröllers-Mulderij, M. (author), Tromp, P. (author), Nelissen, I. (author), Zondervan-Van Den Beuken, E.K. (author), Vandebriel, R.J. (author)Exposure of humans to metal oxide nanoparticles (NPs) occurs mainly via air, and inhaled metal oxide NPs may generate inflammation. The aim of this study was to investigate the proinflammatory potential of six metal oxide NPs (CeO2, Mn2O3, CuO, ZnO, Co3O4 and WO3; 27–108 μg ml−1) using human primary 3-dimensional airway epithelium (MucilAir™)...article 2018
- document
-
Zardetto, V. (author), Senes, A. (author), Najafi, M. (author), Zhang, D. (author), Joly, R. (author), Chippari, M. (author), Arneouts, T. (author), Poodt, P. (author), Veenstra, S. (author), Andriessen, R. (author)In order to bring the organo-lead halide perovskite solar cells (PSC) towards the commercialization, the device stability needs to be drastically improved. Our approach relies on the introduction of a compact metal oxide (MeO) layer in a p-i-n planar architecture by means of atmospheric pressure spatial atomic layer deposition (s-ALD) technique....conference paper 2018
- document
-
Papadopoulos, N. (author), Steudel, S. (author), de Roose, F. (author), Eigabry, D.M. (author), Kronemeijer, A.J. (author), Genoe, J. (author), Dehaene, W. (author), Myny, K. (author)In this paper a charge sense amplifier (CSA) using a 5μm In-Ga-Zn-O transistor technology on 15μm thick flexible substrate is presented for readout of a 500dpi fingerprint sensor array targeting direct integration with active matrix organic light emitting displays (AMOLED). The CSA achieves a linear input range of 0.8V for rail to rail output at...conference paper 2018
- document
-
Papadopoulos, N. (author), Steudel, S. (author), de Roose, F. (author), Eigabry, D.M. (author), Kronemeijer, A.J. (author), Genoe, J. (author), Dehaene, W. (author), Myny, K. (author)In this paper a charge sense amplifier (CSA) using a 5μm In-Ga-Zn-O transistor technology on 15μm thick flexible substrate is presented for readout of a 500dpi fingerprint sensor array targeting direct integration with active matrix organic light emitting displays (AMOLED). The CSA achieves a linear input range of 0.8V for rail to rail output at...conference paper 2018
- document
-
Verschueren, L. (author), Ameys, M. (author), de Roose, F. (author), Steudel, S. (author), van der Steen, J.L.P.J. (author), Gelinck, G.H. (author), Kronemeijer, A.J. (author), Huang, C. (author), Tsai, C. (author), Huang, Y. (author), Yeh, M. (author), Heremans, P. (author), Myny, K. (author), Dehaene, W. (author), Genoe, J. (author)A novel external VT compensation method, using a simple driving scheme, is presented, enabling high resolution, yet uniform displays, regardless of the size. The uniformity can be maintained for initial VT nonuniformities as well as VT shifts occurring during operation, like bias stress. The characterized display area shows a significant...conference paper 2018
- document
-
Steudel, S. (author), van der Steen, J.L. (author), Nag, M. (author), Ke, T.H. (author), Smout, S. (author), Bel, T. (author), van Diesen, K. (author), de Haas, G. (author), Maas, J. (author), de Riet, J. (author), Rovers, M. (author), Verbeek, R. (author), Huang, Y.Y. (author), Chiang, S.C. (author), Ameys, M. (author), de Roose, F. (author), Dehaene, W. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)We present a qHD (960x540 with 3 sub-pixels) top-emitting AMOLED display with 340ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with humidity barrier. The back plane process flow is based on a 7 layer photolithography process with a CD=4um. We implement a 2T1C pixel engine and use commercial source driver IC made...conference paper 2017
- document
-
Marinkovic, M. (author), Takata, R. (author), Neumann, A. (author), Pham, D.V. (author), Anselmann, R. (author), Maas, J. (author), van der Steen, J.L. (author), Gelinck, G. (author), Katsouras, Ilias (author)Solution type metal-oxide semiconductor was processed on mass-production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous TFT performance and bias stress reliability....conference paper 2017
- document
-
Heremans, P. (author), Papadopoulos, N. (author), de Jamblinne De Meux, A. (author), Nag, M. (author), Steudel, S. (author), Rockele, M. (author), Gelinck, G. (author), Tripathi, A. (author), Genoe, J. (author), Myny, K. (author)We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital electronics to transmit the acquired data wirelessly to a base station. We examine the electronic...conference paper 2016
- document
-
Nag, M. (author), Steudel, S. (author), Smout, S. (author), Bhoolokam, A. (author), Genoe, J. (author), Cobb, B. (author), Kumar, A. (author), Groeseneken, G. (author), Heremans, P. (author)In this study, we have compared the performance of self-aligned a-IGZO thin-film transistors (TFTs) whereby the source/drain (S/D) region's conductivity enhanced in three different ways, that is, using SiNx interlayer plasma (hydrogen diffusion), using calcium (Ca as reducing metal) and using argon plasma (changing the atomic ratio). All these...article 2015
- document
-
Nag, M. (author), Bhoolokam, A. (author), Steudel, S. (author), Chasin, A. (author), Maas, J. (author), Genoe, J. (author), Murata, M. (author), Groeseneken, G. (author), Heremans, P. (author)In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as fieldeffect mobility (μFE), sub-threshold slope (SS−1) and current ratio (ION/OFF) to the conventional plasma...article 2015
- document
-
Nag, M. (author)In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT characteristics. Finally an optimized layer was...article 2015
- document
-
Nag, M. (author), Bhoolokam, A. (author), Smout, S. (author), Willegems, M. (author), Muller, R. (author), Myny, K. (author), Schols, S. (author), Ameys, M. (author), Genoe, J. (author), Ke, T.H. (author), Vicca, P. (author), Ellis, T. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L.P.J. (author), Gelinck, G. (author), Fukui, Y. (author), Obata, K. (author), Groeseneken, G. (author), Heremans, P. (author), Steudel, S. (author)A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5...article 2015
Pages
- 1
- 2