Searched for: subject%3A%22Memory%22
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van Breemen, A.J.J.M. (author), van der Steen, J.L. (author), van Heck, G. (author), Wang, R. (author), Khiklovskyi, V. (author), Kemerink, M. (author), Gelinck, G.H. (author)
In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25um thickness. By sandwiching this polymer blend film between rows and columns of metal electrode lines where each...
article 2014
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van Breemen, A. (author), Kam, B. (author), Cobb, B. (author), Rodriguez, F.G. (author), van Heck, G. (author), Myny, K. (author), Marrani, A. (author), Vinciguerra, V. (author), Gelinck, G.H. (author)
In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to a size of 16 × 16, processed on thin (25 μm)...
article 2013
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Sertlek, H.O. (author), Ainslie, M.A. (author)
The accurate and stable calculation of underwater acoustic propagation is needed for applications such as sonar performance prediction, noise mapping and acoustic communication. In this work, some widely used acoustic propagation models, based on different methods such as normal mode, ray tracing, parabolic equation and flux theory are tested on...
conference paper 2013
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Khikhlovskyi, V. (author), Gorbunov, A.V. (author), van Breemen, A.J.J.M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)
Storage of multiple bits per element is a promising alternative to miniaturization for increasing the information data density in memories. Here we introduce a multi-bit organic ferroelectric-based non-volatile memory with binary readout from a simple capacitor structure. The functioning of our multi-bit concept is quite generally applicable and...
article 2013
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Ainslie, M.A. (author), Ellis, D.D. (author), Ehrlich, J. (author), Schippers, P. (author), Hjelmervik, K.T. (author), Colin, M.E.G.D. (author)
The need for benchmarks of propagation loss was addressed by a series ofworkshops in the 1980s. The main results of those workshops were a set of well-defined propagation scenarios and their corresponding solutions. The availability of these benchmarks permitted the systematic evaluation of the accuracy of propagation models suitable for passive...
conference paper 2013
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Li, M. (author), Stingelin, N. (author), Michels, J.J. (author), Spijkman, M.-J. (author), Asadi, K. (author), Beerends, R. (author), Biscarini, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The processing of solution-based binary blends of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) and the semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) applied by spin-coating and wire-bar coating is investigated. By systematic variation of blend composition, solvent, and deposition...
article 2012
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Kam, B. (author), Li, X. (author), Cristoferi, C. (author), Smits, E.C.P. (author), Mityashin, A. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top...
article 2012
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Kemerink, M. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic...
article 2012
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Brondijk, J.J. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model is presented that describes the charge...
article 2012
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Coffey, E.B.J. (author), Brouwer, A.M. (author), van Erp, J.B.F. (author)
The ability to continuously monitor workload in a real-world environment would have important implications for the offline design of human machine interfaces as well as the real-time online improvement of interaction between humans and machines. The present study explored the usefulness of combining electroencephalography (EEG) with the newer...
conference paper 2012
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Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Passive or active matrix driving schemes in large displays are prone to high power consumption and cost, respectively. For signage applications such as large out-door displays with low refresh rates there is as yet no technological solution. Here the MEMOLED solution, an organic light-emitting diode with an integrated ferroelectric memory, is...
article 2011
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Asadi, K. (author), Wondergem, H.J. (author), Moghaddam, R.S. (author), McNeill, C.R. (author), Stingelin, N. (author), Noheda, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The operation of resistive switches based on phase-separated blends of organic ferroelectrics and semiconductors depends significantly on the microstructure of such systems. A wide range of analysis techniques are used to characterize spin-coated films of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)...
article 2011
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Tripathi, A.K. (author), van Breemen, A.J.J.M. (author), Shen, J. (author), Gao, Q. (author), Ivan, M.G. (author), Reimann, K. (author), Meinders, E.R. (author), Gelinck, G.H. (author)
Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by...
article 2011
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Brinkman, W.P. (author), Vermetten, E. (author), van den Steen, M. (author), Neerincx, M.A. (author)
Several methods have been proposed to treat combat veterans with Posttraumatic Stress Disorder (PTSD). Still, a recent review reports on high drop-out and non response rates. This has motivated work in the design of a software application to support and increase the appeal of traditional face-to-face trauma-focused psychotherapy. The research...
article 2011
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van Breemen, A.J.J.M. (author), van der Putten, J.B.P.H. (author), Cai, R. (author), Reimann, K. (author), Marsman, A.W. (author), Willard, N. (author), de Leeuw, D.M. (author), Gelinck, G.H. (author)
An I-line photolithography process for ferroelectric polymers is developed. It is based on photocrosslinking using a bisazide photoinitiator. Patterned layers were realized down to 1-2 µm resolution. Crosslinking yields a close-to-insoluble ferroelectric polymer network that counter intuitively has similar ferroelectric properties as a...
article 2011
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Berbée, J.F.P. (author), Abildayeva, K. (author), Blokland, A. (author), Jansen, P.J. (author), Lütjohann, D. (author), Gautier, T. (author), Sijbrands, E. (author), Prickaerts, J. (author), Hadfoune, M. (author), Ramaekers, F.C.S. (author), Kuipers, F. (author), Rensen, P.C.N. (author)
The e4 allele of apolipoprotein E (APOE4), which is a well established genetic risk factor for development of Alzheimer's disease (AD), is in genetic disequilibrium with the H2 allele of apolipoprotein C1 (APOC1), giving rise to increased expression of apoC-I. This raises the possibility that the H2 allele of APOC1, either alone or in...
article 2011
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Asadi, K. (author), Li, M. (author), Blom, P.W.M. (author), Kemerink, M. (author), de Leeuw, D.M. (author)
Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto...
article 2011
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Neerincx, M.A. (author), Kallen, V.L. (author), Brouwer, A.-M. (author), van der Leer, L. (author), ten Brinke, M. (author), TNO Defensie en Veiligheid (author)
Recent research shows that Virtual Reality (VR) exposure or bio-neuro feedback can help professionals to cope with possibly traumatic events. This paper presents a neuro-bio VR system that combines both methods in order to further improve the prevention and therapy of trauma-related disorders. This system can harmonize the VR exposure to user's...
conference paper 2010
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Asadi, K. (author), Wildeman, J. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Resistive switches have been fabricated using a phase-separated blend film of ferroelectric random copolymer poly(vinylidene fluoride-co-trifluoroethylene) with the organic semiconductor regio-irregular poly(3-hexylthiophene) (rir-P3HT). Spin-coated blend films have been contacted with symmetrical Ag top and Ag bottom electrodes, yielding...
article 2010
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Naber, R.C.G. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), de Boer, B. (author), TNO Industrie en Techniek (author)
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important...
article 2010
Searched for: subject%3A%22Memory%22
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