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Muhammed, M.A.H. (author), Lamers, M. (author), Baumann, V. (author), Dey, P. (author), Blanch, A.J. (author), Polishchuk, I. (author), Kong, X.T. (author), Levy, D. (author), Urban, A.S. (author), Govorov, A.O. (author), Pokroy, B. (author), Rodríguez-Fernández, J. (author), Feldmann, J. (author)
Elucidating the underlying principles behind band gap engineering is paramount for the successful implementation of semiconductors in photonic and optoelectronic devices. Recently it has been shown that the band gap of a wide and direct band gap semiconductor, such as ZnO, can be modified upon cocrystallization with amino acids, with the role of...
article 2018
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Mameli, A. (author), Verheijen, M.A. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)
Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma processes yielding anisotropic (or directional) etch profiles...
article 2018