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Yuan, C.A. (author), Kregting, R. (author), van Driel, W. (author), Gielen, A.W.J. (author), Xiao, A. (author), Zhang, G.Q. (author)High Power RF electronics is one of the essential parts for wireless communication, including the personal communication, broadcasting, microwave radar, etc. Moreover, high efficient high power electronics has entered the ISM market, such as the power generator of microwave oven. Power electronics requires a close co-development of digital...conference paper 2011
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de Heij, W. (author), de Boer, A. (author), de Hek, A.P. (author), van Vliet, F.E. (author)A Silicon-Germanium single chip receiver has been developed for S-band phased array radars with 2-D digital beamforming. The complete receiver chain from the S-band RF input up to the low-IF output has been integrated on a single SiGe chip. The only external components required to complete the receiver are an RF limiter for protection against...conference paper 2011
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de Boer, A. (author), Rodenburg, M. (author), van Dijk, R. (author), van Vliet, F.E. (author), Geurts, M. (author)An 8 - 10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF chain uses feedback, selectable gain settings and DC offset circuitry to be...conference paper 2011
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Oosterhuis, G. (author), Huis in 't veld, A.J. (author), Chall, P. (author)Interconnects are an important cost driver in advanced 3D chip packaging. This holds for Through Silicon Vias (TSV) for chip stacking, but also for other integrated Si-technology. Especially in applications with a low number (<100 mm-2) of relatively large (10-2- um diameter), high aspect ratio (1:5-1:20) vertical interconnects (TSV's),...conference paper 2011
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Ma, K. (author), van Leuken, R. (author), Vidojkovic, M. (author), Romme, J. (author), Rampu, S. (author), Pflug, H. (author), Huang, L. (author), Dolmans, G. (author)PLLs have become an important part of electrical systems. When designing a PLL, an efficient and reliable simulation platform for system evaluation is needed. However, the closed loop simulation of a PLL is time consuming. To address this problem, in this paper, a new PLL model containing both digital and analog parts based on the recently...conference paper 2011
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Westerveld, W.J. (author), Harmsma, P.J. (author), Schmits, R. (author), Tabak, E. (author), Pozo Torres, J.M. (author), Urbach, H.P. (author), Yousefi, M. (author)Silicon-on-insulator (SOI) technology has become one of the focus platforms for photonic integrated circuits (PICs). The CMOS technology opens the possibility for reliable mass fabrication of cost-effective photonic circuits. Recently there has been a growing interest in direct optical sensing of, for example, temperature, pressure or strain,...conference paper 2011
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Spijkman, M.-J. (author), Myny, K. (author), Smits, E.C.P. (author), Heremans, P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)The first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a-Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the first gate. The main advantage is that the...article 2011
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Wane, S. (author), van Heijster, R.E.M. (author), Bardy, S. (author)This paper presents design solutions for signal detectors and Antenna on-Chip (AoC) using a state-of-the-art (SiGe) BiCMOS technology. Both CML (Current-Mode-Logic) and CMOS detectors are designed, fabricated and compared in terms of their performances such as conversion gain and robustness against process variations. Wide-band Antenna-on-Chip...conference paper 2011
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Hagen, R. (author), Pozo Torres, J.M. (author), Kazmierczak, A. (author), Westerveld, W.J. (author), Harmsma, P.J. (author), van den Berg, J.H. (author), Schmits, R. (author), Yousefi, M. (author), Cabezon, M. (author), Villafranca, A. (author), Izquierdo, D. (author), Garces, J.I. (author)One of the important issues of System-on-a-package integration is the interconnection between independent Photonic Integrated Circuits (PICs). In this work, this issue is addressed by the use of Vertical Grating Couplers (VGCs) as the element for the interconnection between two Silicon-on-Insulator (SOI) PICs. Theoretical simulations using the...conference paper 2011
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Bode, D. (author), Myny, K. (author), Verreet, B. (author), van der Putten, J.B.P.H. (author), Bakalov, P. (author), Steudel, S. (author), Smout, S. (author), Vicca, P. (author), Genoe, J. (author), Heremans, P.L. (author), TNO Industrie en Techniek (author)Recently, complex circuits of organic thin-film transistors have been shown. The use of complementary logic can significantly ease the design of large integrated circuits. However, the performance of complementary logic in organic thin-film technology has not been able to equivale that of unipolar logic, due to the difficulty to densely...article 2010
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Gholamrezaie, F. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Geuns, T.C.T. (author), van Hal, P.A. (author), Ponomarenko, S.A. (author), Flesch, H.-G. (author), Resel, R. (author), Cantatore, E. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)We report on a two-dimensional highly ordered self-assembled monolayer (SAM) directly grown on a bare polymer surface. Semiconducting SAMs are utilized in field-effect transistors and combined into integrated circuits as 4-bit code generators. The driving force to form highly ordered SAMs is packing of the liquid crystalline molecules caused by...article 2010
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Vidojkovic, M. (author), Rampu, S. (author), Imamura, K. (author), Harpe, P. (author), Dolmans, G. (author), de Groot, H. (author), TNO Industrie en Techniek (author)This paper presents an ultra low power super-regenerative RF front-end for wireless body area network (WBAN) applications. The RF front-end operates in the 2.36-2.4 GHz medical BAN and 2.4-2.485 GHz ISM bands, and consumes 500 μW. It supports OOK modulation at high data rates ranging from 1-5 Mbps. It achieves a sensitivity of -67 dBm at a BER...conference paper 2010
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Quay, R. (author), Maroldt, S. (author), Haupt, C. (author), van Heijningen, M. (author), Tessmann, A. (author), TNO Defensie en Veiligheid (author)In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The measured output power of several dual-stage GaN...article 2009
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van der Bent, G. (author), de Hek, A.P. (author), Bessemoulin, A. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)A high power X-band amplifier with an output power over 10 Watts and a Power Added Efficiency (PAE) in excess of 40 percent has been developed. The design was fabricated in a 0.25 μm pHEMT GaAs process (WIN Semiconductor PP25-01). The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of...conference paper 2009
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van Heijningen, M. (author), Janssen, J.P.B. (author), van Vliet, F.E. (author), TNO Defensie en Veiligheid (author)Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch design shows a 1 dB compression point of 43...article 2009
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TNO Defensie en Veiligheid (author), Krämer, M.C.J.C.M. (author), Karouta, F. (author), Kwaspen, J.J.M. (author), Rudzinski, M. (author), Larsen, P.K. (author), Suijker, E.M. (author), de Hek, P.A. (author), Rödle, T. (author), Volokhine, I. (author), Kaufmann, L.M.F. (author)A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Hence, it is obvious that breakdown voltages over 160 V are required to achieve record output power...conference paper 2008
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Gordijn, A. (author), van den Donker, M.N. (author), Finger, F. (author), Hamers, E.A.G. (author), Jongerden, G.J. (author), Kessels, W.M.M. (author), Bartl, R. (author), van Mol, A.M.B. (author), Rath, J.K. (author), Rech, B. (author), Schlatmann, R. (author), Schropp, R.E.I. (author), Stannowski, B. (author), Stiebig, H. (author), van de Sanden, M.C.M. (author), van Swaaij, R.A.C.M.M. (author), Zeman, M. (author)In order to reduce the costs of thin-film silicon solar cell production, a manufacturing concept in which amorphous silicon (a-Si) solar cells are produced in a roll-to-roll manner on a temporary metal substrate (temporary-superstrate process) has been introduced in the Helianthos Project. Later in the process the device is transferred to a...conference paper 2007
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TNO Defensie en Veiligheid (author), Maas, A.P.M. (author), Janssen, J.P.B. (author), van Vliet, F.E. (author)A set of X-band absorptive limiter GaAs MMICs has been designed and realised using both the PPH25x foundry process from UMS and the PP50-10 process from WIN semiconductors. The innovative limiter concepts have been extensively characterised by both pulsed and CW measurements. Both passive and active topologies have been implemented. The passive...conference paper 2007
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TNO Defensie en Veiligheid (author), van Vliet, F.E. (author), de Boer, A. (author), Visser, G.C. (author)This paper presents very recent achievements in the Silicon implementation of phase and amplitude control for active electronically steered arrays. The IC combines 6-bit amplitude control with more than 20 dB amplitude range, including control logic and series-to-parallel converters. The IC is a step forward in lowering active array cost and...conference paper 2007
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TNO Defensie en Veiligheid (author), van Wanum, M. (author), van der Bent, G. (author), Rodenburg, M. (author), de Hek, A.P. (author)Robust digital control logic for a X-band fivebit digital attenuator and six-bit phase shifter has been developed and tested. The circuit uses an innovative combination of feedback and feed forward. The devices have been developed in the 6-inch 0.5 um power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process results in cost...conference paper 2006