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High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers
High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers
400-Watt S-band Power Amplifier MMIC
400-Watt S-band Power Amplifier MMIC
New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs
New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs
A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin in Qubits/Transmons in 22nm FinFET Technology for Quantum Computers
A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin in Qubits/Transmons in 22nm FinFET Technology for Quantum Computers
Mathematical formulation of quantum circuit design problems in networks of quantum computers
Mathematical formulation of quantum circuit design problems in networks of quantum computers
EQASM: An executable quantum instruction set architecture
EQASM: An executable quantum instruction set architecture
EO system design and performance optimization by image-based end-to-end modeling
EO system design and performance optimization by image-based end-to-end modeling
Photonic Integrated Circuits for Satcom
Photonic Integrated Circuits for Satcom
A link layer protocol for quantum networks
A link layer protocol for quantum networks
Screening of Integrated GaAs Stacked-FET Power Amplifiers
Screening of Integrated GaAs Stacked-FET Power Amplifiers
Design procedure for integrated microwave GaAs stacked-FET high-power amplifiers
Design procedure for integrated microwave GaAs stacked-FET high-power amplifiers
Dual-gate self-aligned IGZO TFTs monolithically integrated with high-temperature bottom moisture barrier for flexible AMOLED
Dual-gate self-aligned IGZO TFTs monolithically integrated with high-temperature bottom moisture barrier for flexible AMOLED
Phase Controlled 2.6-3.5 GHz Fractional-N PLL IC
Phase Controlled 2.6-3.5 GHz Fractional-N PLL IC
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8
EM - Based GaN Transistor Small-Signal Model Scaling
EM - Based GaN Transistor Small-Signal Model Scaling
C-Band Single Chip Radar Front-End in AlGaN/CaN Technology
C-Band Single Chip Radar Front-End in AlGaN/CaN Technology
60 GHz 5-bit digital controlled phase shifter in a digital 40 nm CMOS technology without ultra-thick metals
60 GHz 5-bit digital controlled phase shifter in a digital 40 nm CMOS technology without ultra-thick metals
An 8-10 GHz upconversion mixer, with a low-frequency calibration loop resulting in better than -73dBc in-band spurs
An 8-10 GHz upconversion mixer, with a low-frequency calibration loop resulting in better than -73dBc in-band spurs
20W S-band high power amplifier using stacked FET topology
20W S-band high power amplifier using stacked FET topology
Spatial mode-selective waveguide with hyperbolic cladding
Spatial mode-selective waveguide with hyperbolic cladding
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