EM - Based GaN Transistor Small-Signal Model Scaling

A small-signal model of a Gallium Nitride (GaN) Field Effect Transistor (FET) is created which consists of a compact linear model of the intrinsic gate fingers and an Electro-Magnetic (EM)-based model of the extrinsic part. Accurate scaling of transistor size is obtained which means that larger transistors than supported by standard (foundry)...

C-Band Single Chip Radar Front-End in AlGaN/CaN Technology

This paper presents the design and measurement results of a single-chip front-end monolithic microwave integrated circuit (MMIC), incorporating a high-power amplifier, transmit– receive switch, low-noise amplifier, and calibration coupler,realized in 0.25 μm AlGaN/GaN-on-SiC MMIC technology of UMS (GH25-10). The MMIC is operating in C-band (5.2...

Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications

The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 μm and 0.15 μm AlGaN/GaN microstrip...

Gallium Nitride MMICs for mm-Wave Power Operation

In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The measured output power of several dual-stage GaN...

Robust AlGaN/GaN MMIC Receiver Components

Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch design shows a 1 dB compression point of 43...

Robust X-band LNAs in AlGaN/GaN technology

Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designed in the Alcatel-Thales III-V lab AlGaN/GaN...

Suitability of integrated protection diodes from diverse semiconductor technologies

In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate...