Searched for: subject%3A%22Gallium%22
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Yilmaz, P. (author), de Wild, J. (author), Aninat, R. (author), Weber, T. (author), Vermang, B. (author), Schmitz, J. (author), Theelen, M. (author)
A post-mortem analysis is conducted after potential-induced degradation (PID) of a commercial copper-indium-gallium-selenide (CIGS) photovoltaic module. After PID, the conversion efficiency of the total module decreased by 62%. Electroluminescence images of the module show that the edges of the modules were much more affected by the PID than the...
article 2023
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Leva, S. (author), Ogliari, E. (author), Ott, M.G.C. (author), Aninat, R. (author), Yilmaz, P. (author)
CIGS (CuInGaSe2) solar cells are electronic devices that directly transform sunlight into electricity and fall into the category of thin film photovoltaic devices. Currently, this type of solar cell has reached the record in photovoltaic conversion efficiency of around 23.35%. However, the maturity of a PV technology also requires reliability...
conference paper 2022
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Aninat, R. (author), Hovestad, A. (author), van Zelst, F. (author), van den Bruele, F.J. (author), Schermer, J.J. (author), Emmelkamp, J. (author), Vlieg, E. (author), Linden, H. (author), Theelen, M. (author)
We study by in-situ X-ray diffraction (XRD) in a unique, custom-made furnace mimicking an industrial setup, the effect of pre-annealing on electroplated and sputtered thin films of Cu-In-Ga, as precursor material for Cu(In,Ga)(S,Se)2 (CIGS)-based solar cells. In the first part of the paper, the properties of the as-deposited precursors are...
article 2022
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Aninat, R. (author), van den Bruele, F.J. (author), Schermer, J.J. (author), Tinnemans, P. (author), Emmelkamp, J. (author), Vlieg, E. (author), van der Vleuten, M. (author), Linden, H. (author), Theelen, M. (author)
The selenisation of Cu-Ga-In metallic precursors is investigated by in-situ X-Ray Diffraction (XRD) in a selenisation tool which mimics at the laboratory scale an industrial tool (thus fully scalable) and allows fine control over the selenisation parameters and reproducibility. In this setup, the interdiffusion of Ga and In was significantly...
article 2021
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Sberna, P.M. (author), Bernardis, A.F. (author), Garufo, A. (author), Bueno, J. (author), Llombart, N. (author), Neto, A. (author)
Photo-conductive lens antennas (PCAs) exploit the ultra-short photoconductivity phenomenon of specific semiconductors in order to generate pulsed radiation in the THz regime. State of the art PCAs suffer from high dispersion and low radiation efficiency over the large generated bandwidth due to the poor coupling between the antenna and the...
conference paper 2021
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Dogan, T. (author), de Riet, J. (author), Bel, T. (author), Katsouras, I. (author), Witczak, L. (author), Kronemeijer, A.J. (author), Janssen, R.A. (author), Gelinck, G.H. (author)
Sub-micrometer thin-film transistors (TFTs) are realized using multi-level imprint lithography. Amorphous indium gallium zinc oxide (α-IGZO) TFTs with channel lengths as small as 0.7 μm, field-effect mobility of 10 cm2 V−1 s−1 and on/off ratio of circa 107 were integrated into a 1000-pixels per inch (ppi) TFT backplane array. The reduction of...
article 2020
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Simicic, M. (author), Ashif, N.R. (author), Hellings, G. (author), Chen, S.H. (author), Nag, M. (author), Kronemeijer, A.J. (author), Myny, K. (author), Linten, D. (author)
The thin-film-transistor (TFT) technology has attracted significant attention in account of the possibility to manufacture transistors on large and flexible substrates, at low processing temperatures and at a low cost. Next to the well-established amorphous silicon TFT technology used mostly for displays, the amorphous Indium-Gallium-Zinc-Oxide ...
article 2020
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Dyson, M.J. (author), Verhage, M. (author), Ma, X. (author), Simone, G. (author), Tordera, D. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author)
Establishing the color of incident light is essential for many applications, such as machine vision, but generally requires either a dispersive component or multiple spectrally selective photodetectors. In contrast, here an incident spectrum is parametrized using a single broadband organic photodiode (OPD). This is achieved by exploiting the...
article 2020
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Ram, M.S. (author), de Kort, L. (author), de Riet, J. (author), Verbeek, R. (author), Bel, T. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
Thin-film transistors (TFTs) are the fundamental building blocks of today's display industry. To achieve higher drive currents and device density, it is essential to scale down the channel lengths of TFTs. To be able to fabricate short-channel TFTs in large volumes is also equally important in order to realize lower fabrication costs and higher...
article 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or...
conference paper 2019
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Zulqarnain, M. (author), Stanzione, S. (author), van der Steen, J.L.P.J. (author), Gelinck, G.H. (author), Abdinia, S. (author), Cantatore, E. (author)
With the advent of the Internet of things, wearable sensing devices are gaining importance in our daily lives for applications like vital signal monitoring during sport and health diagnostics. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) fabricated on flexible large-area substrates are a very interesting platform to...
article 2019
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Tordera, D. (author), Peeters, B. (author), Akkerman, H.B. (author), van Breemen, A.J.J.M. (author), Maas, J. (author), Shanmugam, S. (author), Kronemeijer, A.J. (author), Gelinck, G.H. (author)
Organic photodetectors (OPDs) have attracted much attention in recent years, due to their promise in large-area light sensing applications. Here, high-resolution slot-die-coated large-area bulk heterojunction organic photodiode (OPD) arrays are reported. The OPD uses a novel electron transport layer, indium gallium zinc oxide in combination with...
article 2019
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Fransman, J.E. (author), Sijs, J. (author), Dol, H.S. (author), Theunissen, E. (author), de Schutter, B. (author)
In this paper, Mine Counter-Measures (MCM) operations with multiple cooperative Autonomous Underwater Vehicles (AUVs) are examined within the Distributed Constraint optimization Problem (DCOP) framework. The goal of an MCM-operation is to search for mines and mine-like objects within a predetermined area so that ships can pass the area through a...
conference paper 2019
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or...
conference paper 2019
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de Wild, J. (author), Simor, M. (author), Buldu, D.G. (author), Kohl, T. (author), Brammertz, G. (author), Meuris, M. (author), Poortmans, J. (author), Vermang, B. (author)
KF and NaF treatments were done for single-stage co-evaporated CuIn0.7Ga0.3Se2. The absorber layers were grown on a substrate with an alkali barrier layer and NaF was either added before or after absorber layer growth. No differences were found on the device performance amongst the procedures to add Na. This is expected if the single-stage...
article 2019
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Papadopoulos, N. (author), Steudel, S. (author), Kronemeijer, A.J. (author), Ameys, M. (author), Myny, K. (author)
conference paper 2019
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Rezaei, N. (author), Isabella, O. (author), Procel, P. (author), Vroon, Z.A.E.P. (author), Zeman, M. (author)
A novel back-contacted solar cell based on a submicron copper indium gallium (di)selenide (CIGS) absorber is proposed and optically investigated. First, charge carrier collection feasibility is studied by band diagram analysis. Then, two back-contacted configurations are suggested and optimized for maximum current production. The results are...
article 2019
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van der Bent, G. (author), de Hek, P. (author), van Vliet, F.E. (author)
The application of stacked-FETs in power ampli fiers allows for a supply voltage higher than supported by the breakdown voltage of a single transistor. Potential benefits of the increased supply voltage are reduced supply currents and a lower matching ratio at the output of the amplifier. Furthermore, an increased output power per chip area is...
article 2019
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Andersson, O. (author), Maas, J. (author), Gelinck, G. (author), Kemerink, M. (author)
Electronic ratchets use a periodic potential with broken inversion symmetry to rectify undirected (electromagnetic, EM) forces and can in principle be a complement to conventional diode-based designs. Unfortunately, ratchet devices reported to date have low or undetermined power conversion efficiencies, hampering applicability. Combining...
article 2019
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Heijningen, M. (author), Essing, J. (author), van Vliet, F.E. (author)
In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power...
conference paper 2018
Searched for: subject%3A%22Gallium%22
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