Searched for: subject%3A%22Gaas%22
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document
Sberna, P.M. (author), Bernardis, A.F. (author), Garufo, A. (author), Bueno, J. (author), Llombart, N. (author), Neto, A. (author)
Photo-conductive lens antennas (PCAs) exploit the ultra-short photoconductivity phenomenon of specific semiconductors in order to generate pulsed radiation in the THz regime. State of the art PCAs suffer from high dispersion and low radiation efficiency over the large generated bandwidth due to the poor coupling between the antenna and the...
conference paper 2021
document
Aseev, P. (author), Fursina, A. (author), Boekhout, F. (author), Krizek, F. (author), Sestoft, J.E. (author), Borsoi, F. (author), Heedt, S. (author), Wang, G. (author), Binci, L. (author), Martí-Sánchez, S. (author), Swoboda, T. (author), Koops, R. (author), Uccelli, E. (author), Arbiol, J. (author), Krogstrup, P. (author), Kouwenhoven, L.P. (author), Caroff, P. (author)
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques...
article 2019
document
van Vliet, F. (author), van den Bogaart, F.L.M. (author)
bookPart 2015
document
Busking, E.B. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
A fully integrated 1 GHz buck converter output stage, including on-chip inductor and DC output filtering has been realized, in a standard high-voltage breakdown GaAs MMIC technology. This is a significant step forward in designing highspeed power control of supply-modulated HPAs (high power amplifiers). Agile power controlled HPAs are intended...
conference paper 2012
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TNO Defensie en Veiligheid (author), van Wanum, M. (author), Lebouille, T.T.N. (author), Visser, G.C. (author), van Vliet, F.E. (author)
In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate...
conference paper 2009
Searched for: subject%3A%22Gaas%22
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