Searched for: subject%3A%22Field%255C-effect%255C%2Btransistor%22
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Lodari, M. (author), Kong, O. (author), Rendell, M. (author), Tosato, A. (author), Sammak, A. (author), Veldhorst, M. (author), Hamilton, A.R. (author), Scappucci, G. (author)
We demonstrate that a lightly-strained germanium channel ("// = −0.41%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1 × 106 cm2/Vs and percolation density less than 5 × 1010 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density...
article 2022
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Dogan, T. (author), Verbeek, R. (author), Kronemeijer, A.J. (author), Bobbert, P.A. (author), Gelinck, G.H. (author), van der Wiel, W.G. (author)
A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm...
article 2019
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Ram, M.S. (author), de Kort, L. (author), de Riet, J. (author), Verbeek, R. (author), Bel, T. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
Thin-film transistors (TFTs) are the fundamental building blocks of today's display industry. To achieve higher drive currents and device density, it is essential to scale down the channel lengths of TFTs. To be able to fabricate short-channel TFTs in large volumes is also equally important in order to realize lower fabrication costs and higher...
article 2019
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Hendrickx, N.W. (author), Tagliaferri, M.L.V. (author), Kouwenhoven, M. (author), Li, R. (author), Franke, D.P. (author), Sammak, A. (author), Brinkman, A. (author), Scappucci, G. (author), Veldhorst, M. (author)
We fabricate Josephson field-effect transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Perot resonances,...
article 2019
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Vigneau, F. (author), Mizokuchi, R. (author), Colao Zanuz, D. (author), Huang, X. (author), Tan, S. (author), Maurand, R. (author), Frolov, S. (author), Sammak, A. (author), Scappucci, G. (author), Lefloch, F. (author), de Franceschi, S. (author)
Hybrid superconductor−semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting...
article 2019
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Andersson, O. (author), Maas, J. (author), Gelinck, G. (author), Kemerink, M. (author)
Electronic ratchets use a periodic potential with broken inversion symmetry to rectify undirected (electromagnetic, EM) forces and can in principle be a complement to conventional diode-based designs. Unfortunately, ratchet devices reported to date have low or undetermined power conversion efficiencies, hampering applicability. Combining...
article 2019
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Kronemeijer, A.J. (author), Katsouras, I. (author), Poodt, P. (author), Akkerman, H.B. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author)
We present recent developments on flexible a-IGZO TFT technology scaling in terms of TFT channel length and operating voltage, as well as manufacturing cost optimization with a focus on R2R processing compatibility. We present progress on the relevant technology building blocks; (i) R2R compatible TFT architecture, (ii) (multilevel) nanoimprint...
conference paper 2018
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
A small-signal model of a Gallium Nitride (GaN) Field Effect Transistor (FET) is created which consists of a compact linear model of the intrinsic gate fingers and an Electro-Magnetic (EM)-based model of the extrinsic part. Accurate scaling of transistor size is obtained which means that larger transistors than supported by standard (foundry)...
conference paper 2018
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Yoo, H. (author), Lee, S.B. (author), Lee, D.-K. (author), Smits, E.C.P. (author), Gelinck, G.H. (author), Cho, K. (author), Kim, J.-J. (author)
Split-gate ambipolar organic transistor technology is gaining interests as a practical solution for the implementation of complementary transistors. It is known that conventional ambipolar transistors suffer from poor DC gain, noise margin, and high power consumption, as they do not have a well-defined off-state region. A split-gate device...
article 2018
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Shidachi, R. (author), Matsuhisa, N. (author), Zalar, P. (author), Chow, P.C.Y. (author), Jinno, H. (author), Yokota, T. (author), Someya, T. (author)
In this paper, the amplification of the photocurrent in organic phototransistors (OPTs) employing bulk heterojunctions (BHJs) with different donor–acceptor ratios has been studied. As a model system, poly[2-methoxy-5-(3’,7’-dimethyloctyloxy)-p-phenylene vinylene] (OC1C10-PPV) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) are used as...
article 2018
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Theelen, M. (author), Liakopoulou, A. (author), Hans, V. (author), Daume, F. (author), Steijvers, H. (author), Barreau, N. (author), Vroon, Z. (author), Zeman, M. (author)
Two types of Cu(In,Ga)Se2 (CIGS) solar cells, both designed for implementation in CIGS modules, were subjected to temperatures between 25C and 105C. Simultaneous exposure to AM1.5 illumination allowed the measurement of their electrical parameters at these temperatures. These two types of solar cells, produced with different deposition routes on...
article 2017
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van der Bent, G. (author), de Hek, A.P. (author), van Vliet, F.E. (author)
conference paper 2016
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Lee, J. (author), Roelofs, W.S.C. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author)
The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an...
article 2016
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Nikiforov, G.O. (author), Venkateshvaran, D. (author), Mooser, S. (author), Meneau, A. (author), Strobel, T. (author), Kronemeijer, A. (author), Jiang, L. (author), Lee, M.J. (author), Sirringhaus, H. (author)
The channel temperature (Tch) of solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS pentacene) thin film transistors (TFTs) is closely monitored in real time during current–voltage (I–V) measurements carried out in a He exchange gas cryostat at various base temperatures (Tb) between 300 K and 20 K. This is done using a...
article 2016
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Cai, R. (author), Kassa, H.G. (author), Marrani, A. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), Nysten, B. (author), Hu, Z. (author), Jonas, A.M. (author)
We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of semiconducting poly(triarylamine). The imprinting process results in a decreased switching voltage...
article 2014
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Andringa, A.-M. (author), Smits, E.C.P. (author), Klootwijk, J.H. (author), de Leeuw, D.M. (author)
We present a functional real-time NO2 sensor based on a ZnO field-effect transistor. The dynamic response of the sensor is calculated using a phenomenological charge trapping model, using only experimentally determined parameters. This analytical model is implemented in the sensor protocol to create a hardware demonstrator sensor. We show that...
article 2013
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Ringk, A. (author), Roelofs, W.S.C. (author), Smits, E.C.P. (author), van der Marel, C. (author), Salzman, I. (author), Neuhold, A. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet...
article 2013
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Yu, L. (author), Li, X. (author), Pavlica, E. (author), Koch, F.P.V. (author), Portale, G. (author), Da Silva, I. (author), Loth, M.A. (author), Anthony, J.E. (author), Smith, P. (author), Bratina, G. (author), Kjellander, B.K.C. (author), Bastiaansen, C.W.M. (author), Broer, D.J. (author), Gelinck, G.H. (author), Stingelin, N. (author)
The rich phase behavior of 5,11-bis(triethylsilylethynyl) anthradithiophene (TES ADT) - one of the most promising, solution-processable small-molecular organic semiconductors - is analyzed, revealing the highest performing polymorph among four solid-state phases, opening pathways toward the reliable fabrication of high-performance bottom-gate...
article 2013
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Ringk, A. (author), Li, X. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Neuhold, A. (author), Moser, A. (author), van der Marel, C. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly...
article 2013
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Ringk, A. (author), Roelofs, W.S.C. (author), Smits, E.C.P. (author), van der Marel, C. (author), Salzmann, I. (author), Neuhold, A. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet...
article 2013
Searched for: subject%3A%22Field%255C-effect%255C%2Btransistor%22
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