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van Breemen, A.J.J.M. (author), van der Steen, J.L. (author), van Heck, G. (author), Wang, R. (author), Khiklovskyi, V. (author), Kemerink, M. (author), Gelinck, G.H. (author)In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25um thickness. By sandwiching this polymer blend film between rows and columns of metal electrode lines where each...article 2014
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van Breemen, A. (author), Kam, B. (author), Cobb, B. (author), Rodriguez, F.G. (author), van Heck, G. (author), Myny, K. (author), Marrani, A. (author), Vinciguerra, V. (author), Gelinck, G.H. (author)In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to a size of 16 × 16, processed on thin (25 μm)...article 2013
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Khikhlovskyi, V. (author), Gorbunov, A.V. (author), van Breemen, A.J.J.M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)Storage of multiple bits per element is a promising alternative to miniaturization for increasing the information data density in memories. Here we introduce a multi-bit organic ferroelectric-based non-volatile memory with binary readout from a simple capacitor structure. The functioning of our multi-bit concept is quite generally applicable and...article 2013
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Li, M. (author), Stingelin, N. (author), Michels, J.J. (author), Spijkman, M.-J. (author), Asadi, K. (author), Beerends, R. (author), Biscarini, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)The processing of solution-based binary blends of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) and the semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) applied by spin-coating and wire-bar coating is investigated. By systematic variation of blend composition, solvent, and deposition...article 2012
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- Li, L. (author), van Breemen, A.J.J.M. (author), Khikhlovskyi, V. (author), Smits, E.C.P. (author), Kemerink, M. (author), Broer, D.J. (author), Gelinck, G.H. (author) article 2012
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Kam, B. (author), Li, X. (author), Cristoferi, C. (author), Smits, E.C.P. (author), Mityashin, A. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top...article 2012
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Kemerink, M. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic...article 2012
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Brondijk, J.J. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model is presented that describes the charge...article 2012
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Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)Passive or active matrix driving schemes in large displays are prone to high power consumption and cost, respectively. For signage applications such as large out-door displays with low refresh rates there is as yet no technological solution. Here the MEMOLED solution, an organic light-emitting diode with an integrated ferroelectric memory, is...article 2011
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Asadi, K. (author), Wondergem, H.J. (author), Moghaddam, R.S. (author), McNeill, C.R. (author), Stingelin, N. (author), Noheda, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)The operation of resistive switches based on phase-separated blends of organic ferroelectrics and semiconductors depends significantly on the microstructure of such systems. A wide range of analysis techniques are used to characterize spin-coated films of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)...article 2011
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Michels, J.J. (author), van Breemen, A.J.J.M. (author), Usman, K. (author), Gelinck, G.H. (author)This article describes a combined experimental and theoretical study on nanophase structure development as a result of liquid phase demixing in solution-cast blends of the organic semiconductor poly(9,9'-dioctyl fluorene) (PFO) and the ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)). Blend layers (200 nm) are...article 2011
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Asadi, K. (author), de Bruyn, P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)We have investigated the efficiency enhancement of organic solar cells upon incorporation of a thin ferroelectric polymer layer. For non-Ohmic contacts the enhancement is due to an increased open circuit voltage, which is, however, independent of the ferroelectric polarization direction. Ferroelectricity cannot play a role due to depolarization...article 2011
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Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)Staggered bottom-contact top-gate organic ferroelectric field-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)(2,4,6- trimethylphenyl)amine] as semiconductor. Polarization reversal of the ferroelectric gate is monitored by displacement transients in the...article 2011
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Tripathi, A.K. (author), van Breemen, A.J.J.M. (author), Shen, J. (author), Gao, Q. (author), Ivan, M.G. (author), Reimann, K. (author), Meinders, E.R. (author), Gelinck, G.H. (author)Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by...article 2011
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van Breemen, A.J.J.M. (author), van der Putten, J.B.P.H. (author), Cai, R. (author), Reimann, K. (author), Marsman, A.W. (author), Willard, N. (author), de Leeuw, D.M. (author), Gelinck, G.H. (author)An I-line photolithography process for ferroelectric polymers is developed. It is based on photocrosslinking using a bisazide photoinitiator. Patterned layers were realized down to 1-2 µm resolution. Crosslinking yields a close-to-insoluble ferroelectric polymer network that counter intuitively has similar ferroelectric properties as a...article 2011
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Asadi, K. (author), Li, M. (author), Blom, P.W.M. (author), Kemerink, M. (author), de Leeuw, D.M. (author)Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto...article 2011
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Asadi, K. (author), Wildeman, J. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)Resistive switches have been fabricated using a phase-separated blend film of ferroelectric random copolymer poly(vinylidene fluoride-co-trifluoroethylene) with the organic semiconductor regio-irregular poly(3-hexylthiophene) (rir-P3HT). Spin-coated blend films have been contacted with symmetrical Ag top and Ag bottom electrodes, yielding...article 2010
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Naber, R.C.G. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), de Boer, B. (author), TNO Industrie en Techniek (author)A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important...article 2010
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Mcneill, C.R. (author), Asadi, K. (author), Watts, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)The phase-separated structure of blends of the ferroelectric polymer P(VDF-TrFE) and the semiconducting polymer P3HT used in organic non-volatile memories is revealed with soft X-ray spectromicroscopy. These thin-film blends show a columnar morphology, with P3HT-rich columns enclosed in a continuous, essentially pure P(VDF-TrFE) phase favorable...article 2010
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Asadi, K. (author), de Boer, T.G. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising diodes. Comparison between the on- and off...article 2009
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