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Zhao, D. (author), Lenz, T. (author), Katsouras, I. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)In this work, the macroscopic polarization of a ferroelectric capacitor is correlated with the local domain morphology. To this end, a ferroelectric capacitor of the random copolymer poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] is poled to a set polarization state in a Sawyer-Tower setup. After chemically removing the top electrode,...article 2017
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Khanbareh, H. (author), Hegde, M. (author), Bijleveld, J.C. (author), van der Zwaag, S. (author), Groen, P. (author)High temperature ferroelectrics for thermally stable devices that can detect pressure and temperature are of great industrial interest. Here we describe composites of lead titanate (PT) particle-polyetherimide (PEI) polymers with stable dielectric and piezoelectric properties over a broad range of temperature and frequency. The reported...article 2017
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Lenz, T. (author), Hummel, R. (author), Katsouras, I. (author), Groen, W.A. (author), Nijemeisland, M. (author), Ruemmler, R. (author), Schäfer, M.K.E. (author), de Leeuw, D.M. (author)Recently reported piezoresponse force microscopy (PFM) measurements have proposed that porcine aortic walls are ferroelectric. This finding may have great implications for understanding biophysical properties of cardiovascular diseases such as arteriosclerosis. However, the complex anatomical structure of the aortic wall with different...article 2017
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Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the 'apparent' retention time...article 2016
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James, N.K. (author), Deutz, D.B. (author), Bose, R.J. (author), van der Zwaag, S. (author), Groen, P. (author)A high-voltage coefficient has been found in lead-free piezoelectric particulate composites based on epoxy with lead-free (K0.50Na0.50)0.94Li0.06NbO3 (KNLN) piezoceramic particles with a natural cubic morphology. The KNLN powder used in the composites has been prepared using a new solid-state double calcination processing route. These particles...article 2016
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Lenz, T. (author), Sharifi Dehsari, H. (author), Asadi, K. (author), Blom, P.W.M. (author), Groen, W.A. (author), de Leeuw, D.M. (author)We demonstrate that ferroelectric memory diodes can be utilized as switching type positive temperature coefficient (PTC) thermistors. The diode consists of a phase separated blend of a ferroelectric and a semiconducting polymer stacked between two electrodes. The current through the semiconducting polymer depends on the ferroelectric...article 2016
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Zhao, D. (author), Katsouras, I. (author), Asadi, K. (author), Groen, W.A. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of...article 2016
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Cai, R. (author), Kassa, H.G. (author), Haouari, R. (author), Marrani, A. (author), Geerts, Y.H. (author), Ruzié, C. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), Nysten, B. (author), Hu, Z. (author), Jonas, A.M. (author)Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating...article 2016
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Lee, J. (author), van Breemen, A.J.J.M. (author), Khikhlovskyi, V. (author), Kemerink, M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author)We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components...article 2016
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Katsouras, I. (author), Zhao, D. (author), Spijkman, M.J. (author), Li, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), Asadi, K. (author)The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual...article 2015
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Lenz, T. (author), Zhao, D. (author), Richardson, G. (author), Katsouras, I. (author), Asadi, K. (author), Glasser, G. (author), Zimmermann, S.T. (author), Stingelin, N. (author), Roelofs, W.S.C. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non-volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random copolymer of vinylidenefluoride and trifluoroethylene (P(VDFTrFE)) interdigitated with the...article 2015
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Gelinck, G.H. (author), Cobb, B. (author), van Breemen, A.J.J.M. (author), Myny, K. (author)Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading...article 2015
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van Breemen, A.J.J.M. (author), Zaba, T. (author), Khikhlovskyi, V. (author), Michels, J. (author), Janssen, R. (author), Kemerink, M. (author), Gelinck, G. (author)The polymer phase separation of P(VDF-TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase-separating mixture of P(VDF-TrFE) and F8BT in a thin film into a highly ordered 2D lattice by...article 2015
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Zhao, D. (author), Katsouras, I. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)Switching, i.e., polarization reversal, of ferroelectric P(VDF-TrFE) thin films has been investigated in a wide range of applied electric field and temperature. The measured polarization transients can be quantitatively described by a compressed exponential function as originally formulated by Kolmogorov, Avrami, and Ishibashi (the KAI model)....article 2015
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Cai, R. (author), Kassa, H.G. (author), Marrani, A. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), Nysten, B. (author), Hu, Z. (author), Jonas, A.M. (author)Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one...conference paper 2015
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Gelinck, G.H. (author), van Breemen, A.J.J.M. (author), Cobb, B. (author)Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can...article 2015
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Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Michels, J.J. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of...article 2015
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Cai, R. (author), Kassa, H.G. (author), Marrani, A. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), Nysten, B. (author), Hu, Z. (author), Jonas, A.M. (author)We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of semiconducting poly(triarylamine). The imprinting process results in a decreased switching voltage...article 2014
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Nougaret, L. (author), Kassa, H.G. (author), Cai, R. (author), Patois, T. (author), Nysten, B. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), de Leeuw, D.M. (author), Marrani, A. (author), Hu, Z. (author), Jonas†, A.M. (author)We demonstrate the design of a multifunctional organic layer by the rational combination of nanosized regions of two functional polymers. Instead of relying on a spontaneous and random phase separation process or on the tedious synthesis of block copolymers, the method involves the nanomolding of a first component, followed by the filling of the...article 2014
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Kam, B. (author), Ke, T.H. (author), Chasin, A. (author), Tyagi, M. (author), Cristoferi, C. (author), Tempelaars, K. (author), van Breemen, A.J.J.M. (author), Myny, K. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for...article 2014
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