Searched for: subject%3A%22EUV%255C%2Blithography%22
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document
Bekman, H.H.P.T. (author), Dekker, M.F. (author), Ebeling, R.P. (author), Janssen, J.P.B. (author), Koster, N.B. (author), Meijlink, J.R. (author), Molkenboer, F.T. (author), Nicolai, K. (author), van Putten, M. (author), Rijnsent, C.G.J. (author), Storm, A.J. (author), Stortelder, J.K. (author), Wu, C.C. (author), de Zanger, R.M.S. (author)
Adoption of EUV lithography for high-volume production is accelerating. TNO has been involved in lifetime studies from the beginning of the EUV alpha demo tools. One of the facilities for these studies is the EUV Beam Line (EBL1) designed and installed at TNO, in close cooperation with Carl Zeiss. There was a desire to improve on the performance...
conference paper 2019
document
Kalhor, N. (author), Mulckhuyse, W.F.W. (author), Alkemade, P.F.A. (author), Maas, D.J. (author)
This paper presents a heuristic model for scanning helium ion beam lithography (SHIBL) in a EUV chemically amplified resist. The model employs a point-spread function to account for all physical and chemical phenomena involved in the resist activation. Ion shot noise effects are accounted for using Poisson statistics. Our model shows a good...
conference paper 2015
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Maas, D.J. (author), van Veldhoven, E. (author), Pohlmann, R.C.M. (author), van Langen-Suurling, A. (author), Alkemade, P.F.A. (author), Wulster, S. (author), Hoefnagels, R. (author), Verspaget, C. (author), Meessen, J. (author), Fliervoet, T. (author)
other 2014
document
Maas, D.J. (author), van Zwet, E.J. (author)
public lecture 2014
document
Maas, D.J. (author), van Veldhoven, E. (author), van Langen-Suurling, A. (author), Alkemade, P.F.A. (author), Wuister, S. (author), Hoefnagels, R. (author), Verspaget, C. (author), Meessen, J. (author), Fliervoet, T. (author)
For the introduction of EUV lithography, development of high performance EUV resists is of key importance. This development involves studies into resist sensitivity, resolving power and pattern uniformity. We have used a sub-nanometer-sized 30 keV helium ion beam to expose chemically amplified (CAR) EUV resists. There are similarities in the...
conference paper 2014
document
Mertens, B.M. (author), Weiss, M. (author), Meiling, H. (author), Klein, R. (author), Louis, E. (author), Kurt, R. (author), Wedowski, M. (author), Trenkler, H. (author), Wolschrijn, B.T. (author), Jansen, R. (author), van de Runstraat, A. (author), Moors, R. (author), Spee, C.I.M.A. (author), Plöger, S. (author), van de Kruijs, R. (author), Technisch Physische Dienst TNO - TH (author)
Optics lifetime and contamination is one of the major challenges for extreme ultraviolet (EUV) lithography. The basic contamination and lifetime limiting processes are carbon growth and oxidation of the mirrors. Without appropriate measures, optics lifetime will be limited to a few hours. Within the EUV α-tool project of ASML and Carl Zeiss,...
article 2004
Searched for: subject%3A%22EUV%255C%2Blithography%22
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