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First results of EUV-scanner compatibility tests performed on novel ‘high-NA’ reticle absorber materials

Stortelder, J.K. (author), Ebeling, R.P. (author), Rijnsent, C.G.J. (author), van Putten, M. (author), Rooij-Lohmann, V.I.T.A. (author), Smit, M.E.M. (author), Storm, A.J. (author), Koster, N.B. (author), Lensen, H.A. (author), Philipsen, V. (author), Opsomer, K. (author), Thakare, D. (author), Feigl, T. (author), Naujok, P. (author)

Novel reticle absorber materials are required for high-NA EUV lithography. TNO and ASML developed an assessment for the compatibility of novel high-NA reticle absorber materials with conditions that mimic the EUV scanner environment[1]. Four candidate reticle absorber materials were evaluated, TaCo, RuTa, PtMo and Pt2Mo alloys, in a joint...

conference paper 2021

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Compatibility assessment of novel reticle absorber materials for use in EUV lithography systems

Stortelder, J.K. (author), Storm, A.J. (author), de Rooij-Lohmann, V.I.T.A. (author), Wu, C.C. (author), van Schaik, W. (author)

Novel absorber materials are being developed to improve EUV-reticle imaging performance for the next generations of EUV lithography tools. TNO, together with ASML, has developed a compatibility assessment for novel absorber materials, which addresses the risk that exposure of incompatible materials to EUV-radiation and EUV-plasma conditions...

conference paper 2019

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EBL2 an EUV (Extreme Ultra-Violet) lithography beam line irradiation facility

Bekman, H.H.P.T. (author), Dekker, M.F. (author), Ebeling, R.P. (author), Janssen, J.P.B. (author), Koster, N.B. (author), Meijlink, J.R. (author), Molkenboer, F.T. (author), Nicolai, K. (author), van Putten, M. (author), Rijnsent, C.G.J. (author), Storm, A.J. (author), Stortelder, J.K. (author), Wu, C.C. (author), de Zanger, R.M.S. (author)

Adoption of EUV lithography for high-volume production is accelerating. TNO has been involved in lifetime studies from the beginning of the EUV alpha demo tools. One of the facilities for these studies is the EUV Beam Line (EBL1) designed and installed at TNO, in close cooperation with Carl Zeiss. There was a desire to improve on the performance...

conference paper 2019

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EUV mask lifetime testing using EBL2

Wu, C.C. (author), te Sligte, E. (author), Bekman, H. (author), Storm, A.J. (author), van Putten, M. (author), Limpens, M.P.M.A. (author), van Veldhoven, J. (author), Deutz, A.F. (author)

EBL2 is TNO's platform for EUV exposure testing and surface analysis. EBL2 is capable of generating conditions relevant to EUV mask operation at all foreseen source power nodes. The authors describe how TNO performs a customized (accelerated) lifetime test on EUV masks. The required gas, EUV, and thermal parameters will be considered, and...

conference paper 2018

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Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications

Koek, W.D. (author), Florijn, H.C.B. (author), Bäumer, S.M.B. (author), Kruidhof, R. (author), Sadeghian Marnani, H. (author)

Due to its potential for high resolution and three-dimensional imaging, soft X-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft X-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to...

conference paper 2018

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Latest developments on EUV reticle and pellicle research and technology at TNO

Verberk, R. (author), Koster, N.B. (author), te Sligte, E. (author), Staring, W.P.M. (author)

conference paper 2017

document

First light on EBL2

Koster, N.B. (author), te Sligte, E. (author), Molkenboer, F.T. (author), Deutz, A.F. (author), van der Walle, P. (author), Muilwijk, P.M. (author), Mulckhuyse, W.F.W. (author), Oostdijck, B.W. (author), Hollemans, C.L. (author), Nijland, B.A.H. (author), Kerkhof, P.J. (author), van Putten, M. (author), Westerhout, J. (author)

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS...

conference paper 2017

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First light and results on EBL2

Koster, N.B. (author), te Sligte, E. (author), Deutz, A.F. (author), Molkenboer, F.T. (author), Muilwijk, P.M. (author), van der Walle, P. (author), Mulckhuyse, W.F.W. (author), Nijland, B.A.H. (author), Kerkhof, P.J. (author), van Putten, M. (author)

Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles under...

conference paper 2017

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Characterization of EBL2 EUV exposure facility

te Sligte, E. (author), van Putten, M. (author), Molkenboer, F.T. (author), van der Walle, P. (author), Muilwijk, P.M. (author), Koster, N.B. (author), Westerhout, J. (author), Kerkhof, P.J. (author), Oostdijck, B.W. (author), Mulckhuyse, W.F.W. (author), Deutz, A.F. (author)

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray...

conference paper 2017

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Impact of design-parameters on the optical performance of a highpower adaptive mirror

Koek, W.D. (author), Nijkerk, M.D. (author), Smeltink, J.A. (author), van den Dool, T.C. (author), van Zwet, E.J. (author), van Baars, G.E. (author)

TNO is developing a High Power Adaptive Mirror (HPAM) to be used in the CO2 laser beam path of an Extreme Ultra-Violet (EUV) light source for next-generation lithography. In this paper we report on a developed methodology, and the necessary simulation tools, to assess the performance and associated sensitivities of this deformable mirror. Our...

conference paper 2017

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Towards a carbon-contamination-tolerant EUV power sensor

van Veldhoven, J. (author), Huijser, T. (author), Nieuwkoop, E. (author), van Putten, M. (author), Koster, N.B. (author), Maas, D.J. (author)

A reproducible measurement of in-band EUV power over time is essential in EUV lithography, e.g. for dose control, for monitoring the transmission of (parts of) the optical path and for detecting changes in EUV source performance. However, all currently available sensors suffer from sensitivity degradation over time due to photon-induced...

conference paper 2016

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EBL2: High power EUV exposure facility

te Sligte, E. (author), Koster, N.B. (author), Molkenboer, F.T. (author), van der Walle, P. (author), Muilwijk, P.M. (author), Mulckhuyse, W.F.W. (author), Oostdijck, B.W. (author), Hollemans, C.L. (author), Nijland, B.A.H. (author), Kerkhof, P.J. (author), van Putten, M. (author), Hoogstrate, A.M. (author), Deutz, A.F. (author)

TNO is building EBL2: a laboratory EUV exposure system capable of operating at high broad band EUV powers and intensities, in which XPS analysis of exposed samples is possible without breaking vacuum. Its goal is to accelerate the development and testing of EUV optics and components by providing a publicly accessible exposure and analysis...

conference paper 2016

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EUV blank defect and particle inspection with high throughput immersion AFM with 1nm 3D resolution

van Es, M.H. (author), Sadeghian Marnani, H. (author)

Inspection of EUV mask substrates and blanks is demanding. We envision this is a good target application for massively parallel Atomic Force Microscopy (AFM). We envision to do a full surface characterization of EUV masks with AFM enabling 1nm true 3D resolution over the entire surface. The limiting factor to do this is in the sensor itself:...

conference paper 2016

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EBL2, a flexible, controlled EUV exposure and surface analysis facility

te Sligte, E. (author), Koster, N.B. (author), Molkenboer, F.T. (author), Deutz, A.F. (author)

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components. EBL2 will consist of a Beam Line, an XPS system, and sample handling infrastructure. EBL2 will accept a wide range of sample sizes, including EUV masks with or without pellicles. All types of...

conference paper 2016

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Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist

Kalhor, N. (author), Mulckhuyse, W.F.W. (author), Alkemade, P.F.A. (author), Maas, D.J. (author)

This paper presents a heuristic model for scanning helium ion beam lithography (SHIBL) in a EUV chemically amplified resist. The model employs a point-spread function to account for all physical and chemical phenomena involved in the resist activation. Ion shot noise effects are accounted for using Poisson statistics. Our model shows a good...

conference paper 2015

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A new mask exposure and analysis facility

te Sligte, E. (author), Koster, N.B. (author), Deutz, A.F. (author), Staring, W.P.M. (author)

The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable...

conference paper 2014

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Progress on EUV Pellicle development

Zoldesi, C.I. (author), Bal, K. (author), Blum, B. (author), Bock, G. (author), Brouns, D. (author), Dhalluin, F. (author), Dziomkina, N. (author), Arias Espinoza, J.D. (author), de Hoogh, J. (author), Houweling, S. (author), Jansen, M. (author), Kamali, M. (author), Kempa, A. (author), Kox, R. (author), de Kruif, R. (author), Lima, J. (author), Liu, Y. (author), Meijer, H. (author), Meiling, H. (author), van Mil, I. (author), Reijnen, M. (author), Scaccabarozzi, L. (author), Smith, D. (author), Verbrugge, B. (author), de Winter, L. (author), Xiong, X. (author), Zimmerman, J. (author)

As EUV approaches high volume manufacturing, reticle defectivity becomes an even more relevant topic for further investigation. Current baseline strategy for EUV defectivity management is to design, build and maintain a clean system without pellicle. In order to secure reticle front side particle adders to an acceptable level for high volume...

conference paper 2014

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Carbon removal from trenches on EUV reticles

Koster, N.B. (author), Geluk, C.P.E.C. (author), Versloot, T.W. (author), Janssen, J.P.B. (author), Fleming, Y. (author), Wirtz, T. (author)

We report on our investigation of dry cleaning of reticles with a microwave induced hydrogen plasma on dummy reticles. The dummy reticles were manufactured with 70 nm ALD grown TaN on a Ru surface and test structures were patterned with lines and spaces ranging between 250 and 400 nm. After processing the test structures were contaminated with e...

conference paper 2014

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TNO reticle handling test platform

Crowcombe, W.E. (author), Hollemans, C.L. (author), Fritz, E.C. (author), van der Donck, J.C.J. (author), Koster, N.B. (author)

other 2014

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Evaluation of EUV resist performance below 20nm CD using helium ion lithography

Maas, D.J. (author), van Veldhoven, E. (author), Pohlmann, R.C.M. (author), van Langen-Suurling, A. (author), Alkemade, P.F.A. (author), Wulster, S. (author), Hoefnagels, R. (author), Verspaget, C. (author), Meessen, J. (author), Fliervoet, T. (author)

other 2014