First results of EUV-scanner compatibility tests performed on novel ‘high-NA’ reticle absorber materials

Novel reticle absorber materials are required for high-NA EUV lithography. TNO and ASML developed an assessment for the compatibility of novel high-NA reticle absorber materials with conditions that mimic the EUV scanner environment[1]. Four candidate reticle absorber materials were evaluated, TaCo, RuTa, PtMo and Pt2Mo alloys, in a joint...

Latest developments on EUV reticle and pellicle research and technology at TNO

First light on EBL2

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS...

First light and results on EBL2

Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles under...

Characterization of EBL2 EUV exposure facility

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray...

Detection of fast flying nanoparticles by light scattering over a large volume

Detection of nanoparticles is of paramount importance for contamination control in ultra-clean systems. Light scattering is a well-known detection method which is applied in many different scientific and technology domains including atmospheric physics, environmental control, and biology. It allows contactless and remote detection of sub-micron...

A new mask exposure and analysis facility

The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable...

Holographic method for detecting amplitude and phase-shift errors and features in EUV ML reticle blanks

A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied to the blank, flood exposed with EUV, and developed. The effect of both phase and reflectivity defects on the reticle is described in terms of a variation in intensity and phase of the standing wave in the resist. Thin film simulations are...

Feasibility of UV cleaning of 157-nm reticles

In DUV lithography, hydrocarbon contaminants on surfaces cause transmission loss. During illumination of the reticle, heavy hydrocarbons will be slowly removed, causing transmission instability. Therefore, the reticles need to be cleaned before use. ASML has commissioned us to perform a feasibility study into reticle cleaning and storage. The...