Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cells

Low activation energy (Ea) and wide bandgap (Eg) are essential for (p)-contacts to achieve effective hole collection in silicon heterojunction (SHJ) solar cells. In this work, we study Plasma-Enhanced Chemical Vapor Deposition p-type hydrogenated nanocrystalline silicon oxide, (p)nc-SiOx:H, combined with (p)nc-Si:H as (p)-contact in front/back...

On the Accuracy of the Cox-Strack Equation and Method for Contact Resistivity Determination

The Cox-Strack method is commonly applied to assess the contact resistivity between a metal and a semiconductor since the 1960s, while the underlying assumptions have not yet been rigorously assessed. In this article, a combination of finite-element modeling and mathematical analysis is used to investigate the accuracy of the conventional Cox...

Organic field-effect transistors as a test-bed for molecular electronics: A combined study with large-area molecular junctions

The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the transmission line measurements in transistors with...

Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices

Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...