Searched for: subject%3A%22Charge%255C%2Binjection%22
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document
Simone, G. (author), Dyson, M.J. (author), Weijtens, C.H.L. (author), Meskers, S.C.J. (author), Coehoorn, R. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author)
Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk...
article 2019
document
Asadi, K. (author), Katsouras, I. (author), Harkema, J. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Biscarini, F. (author), Blom b, P.W.M. (author), de Leeuw, D.M. (author)
The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the transmission line measurements in transistors with...
article 2012
document
Brondijk, J.J. (author), Torricelli, F. (author), Smits, E.C.P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the corresponding gate field is perpendicular to the...
article 2012
document
Gholamrezaie, F. (author), Asadi, K. (author), Kicken, R.A.H.J. (author), Langeveld-Voss, B.M.W. (author), de Leeuw, D.M. (author), Blom, P.W.M. (author)
We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By...
article 2011
document
van Woudenbergh, T. (author), Wildeman, J. (author), Blom, P.W.M. (author), Bastiaansen, J.J.A.M. (author), Langeveld-Voss, B.M.W. (author), TNO Industrie (author)
It has recently been reported that, after electrical conditioning, an ohmic hole contact is formed in poly(9,9-dioctylfluorene) (PFO)-based polymer light-emitting diodes (PLED), despite the large hole-injection barrier obtained with a poly(styrene sulfonic acid)-doped poly(3,4-ethylenedioxythiophene) (PEDOTPSS) anode. We demonstrate that the...
article 2004
Searched for: subject%3A%22Charge%255C%2Binjection%22
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