Searched for: subject%3A%22Bistables%22
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document
Landman, A. (author), Groen, E.L. (author), van Paassen, M.M.R. (author), Bronkhorst, A.W. (author), Mulder, M. (author)
Previous studies show that pilots sometimes make roll reversal errors (RREs) when responding to the aircraft bank angle shown on the attitude indicator (AI). This is suggestive of a perceptual ambiguity in the AI. In the current study, we investigated whether expectation contributes to such misperception. Twenty nonpilots performed tasks in a...
article 2020
document
Li, M. (author), Stingelin, N. (author), Michels, J.J. (author), Spijkman, M.-J. (author), Asadi, K. (author), Beerends, R. (author), Biscarini, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The processing of solution-based binary blends of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) and the semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) applied by spin-coating and wire-bar coating is investigated. By systematic variation of blend composition, solvent, and deposition...
article 2012
document
Zhou, J. (author), Ashouei, M. (author), Kinniment, D. (author), Huisken, J. (author), Russell, G. (author), Yakovlev, A. (author)
Sub-threshold operation has been proven to be very effective to reduce the power consumption of circuits when high performance is not required. Future low power systems on chip are likely to consist of many sub-systems operating at different frequencies and VDDs from super-threshold to sub-threshold region. Synchronizers are therefore needed to...
article 2011
document
Asadi, K. (author), Li, M. (author), Blom, P.W.M. (author), Kemerink, M. (author), de Leeuw, D.M. (author)
Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto...
article 2011
document
Asadi, K. (author), Wildeman, J. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Resistive switches have been fabricated using a phase-separated blend film of ferroelectric random copolymer poly(vinylidene fluoride-co-trifluoroethylene) with the organic semiconductor regio-irregular poly(3-hexylthiophene) (rir-P3HT). Spin-coated blend films have been contacted with symmetrical Ag top and Ag bottom electrodes, yielding...
article 2010
document
Asadi, K. (author), Li, M. (author), Stingelin, N. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A...
article 2010
document
Asadi, K. (author), de Boer, T.G. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising diodes. Comparison between the on- and off...
article 2009
Searched for: subject%3A%22Bistables%22
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