Searched for: subject:"Barriers"
(1 - 4 of 4)
document
Brondijk, J.J. (author), Torricelli, F. (author), Smits, E.C.P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the corresponding gate field is perpendicular to the...
article 2012
document
Kemerink, M. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic...
article 2012
document
Gholamrezaie, F. (author), Asadi, K. (author), Kicken, R.A.H.J. (author), Langeveld-Voss, B.M.W. (author), de Leeuw, D.M. (author), Blom, P.W.M. (author)
We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By...
article 2011
document
Asadi, K. (author), Wildeman, J. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Resistive switches have been fabricated using a phase-separated blend film of ferroelectric random copolymer poly(vinylidene fluoride-co-trifluoroethylene) with the organic semiconductor regio-irregular poly(3-hexylthiophene) (rir-P3HT). Spin-coated blend films have been contacted with symmetrical Ag top and Ag bottom electrodes, yielding...
article 2010
Searched for: subject:"Barriers"
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