document

ALD and ALE: two biotopes of a kind in atomic-scale processing

Roozeboom, F. (author)

The IRDS 2017 Roadmap catches the scaling challenges faced by the semiconductor industry in the upcoming decades by the overall term "3D Power Scaling". In the past scaling era superior material properties and critical dimensions nearing single-digit nanometer values could still be realized by cost-effective technology solutions. As we approach...

public lecture 2021

document

Method for removing a contamination layer by an atomic layer etching process

Roozeboom, F. (author), Ehm, D.H. (author), Illiberi, A. (author), Becker, M. (author), te Sligte, E. (author), Creijghton, Y.L.M. (author)

A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in tum, includes: exposing the...

patent 2021

document

Area-Selective Spatial ALD of SiO2Interleaved with Etch-Back Supercycles: Quantification of Area Selectivity by Low Energy Ion Scattering

Mameli, A. (author), Brüner, P. (author), Roozeboom, F. (author), Grehl, T. (author), Poodt, P. (author)

public lecture 2020

document

On the role of individual etching components in selective atomic layer processing: Etch and deposit to afford high selectivity

Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)

public lecture 2019

document

Isotropic ALE of ZnO using Hacac and O2 plasma

Mameli, A. (author), Verheijen, M.A. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

public lecture 2019

document

Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain high selectivity

Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)

Area-selective atomic layer deposition (AS-ALD) has the potential for pushing device manufacturing towards new frontiers. However, the selectivity that can be obtained is often very limited and the throughput of most AS-ALD methods is low, which hampers its industrial acceptance.[1,2] In this work, we present a process for AS-ALD of SiO2 using...

public lecture 2019

document

Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain selectivities > 10 nm

Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)

public lecture 2019

document

Atomic Layer Etching&Area-Selective Atomic Layer Deposition

Roozeboom, F. (author)

public lecture 2019

document

Area-selective atmospheric-pressure spatial ALD of SiO2 using interleaved back-etch steps yielding selectivity > 10 nm

Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)

public lecture 2019

document

Infrared and Optical Emission Spectroscopy on Atmospheric-Pressure Plasma-Enhanced Spatial ALD of Al2O3

Mione, M.A. (author), Creyghton, Y. (author), Engeln, R. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

public lecture 2019

document

Infrared and Optical Emission Spectroscopy on Atmospheric-Pressure Plasma-Enhanced Spatial ALD of Al2O3

Mione, M.A. (author), Engeln, R. (author), Vandalon, V. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

public lecture 2019

document

Infrared and Optical Emission Spectroscopy on Atmospheric-Pressure Plasma-Enhanced Spatial ALD of Al2O3

Mione, M.A. (author), Engeln, R. (author), Vandalon, V. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

Atmospheric-pressure Plasma-Enhanced spatial Atomic Layer Deposition (PE-s-ALD) is a high-throughput technique for synthesizing thin films at low temperatures for large area applications. The spatial separation of the ALD half-reactions and the use of an atmospheric pressure plasma as the reactant give rise to complex surface chemistry which is...

article 2019

document

Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma

Mameli, A. (author), Verheijen, M.A. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma processes yielding anisotropic (or directional) etch profiles...

article 2018

document

Isotropic Atomic Layer Etching of ZnO on 2D and 3D substrates, using acetylacetone and O2 plasma

Mameli, A. (author), Verheijen, M.A. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

public lecture 2018

document

Isotropic Atomic Layer Etching of ZnO on 2D and 3D substrates, using acetylacetone and O2 plasma

Mameli, A. (author), Verheijen, M.A. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma processes yielding anisotropic (or directional) etch profiles...

article 2018

document

Atomic Layer Deposition Applications 13

conference paper 2017

document

A novel process for Atomic Layer Etching of ZnO using acetylacetone and remote O2 plasma

Mameli, A. (author), Verheijen, M.A. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

public lecture 2017

document

Perspectives of Atomic Layer Etching and related processing

Roozeboom, F. (author)

public lecture 2016

document

New options in advanced atomic layer processing

Roozeboom, F. (author)

public lecture 2016

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Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching

Roozeboom, F. (author), van den Bruele, F. (author), Creyghton, Y. (author), Poodst, P. (author), Kessels, W.M.M. (author)

Conventional (3D) etching in silicon is often based on the ‘Bosch’ plasma etch with alternating half-cycles of a directional Sietch and a fluorocarbon polymer passivation. Also shallow feature etching is often based on cycled processing. Likewise, ALD is time-multiplexed, with the extra benefit of half-reactions being self-limiting, thus...

article 2015