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Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage

Jain, H. (author), Creatore, M. (author), Poodt, P. (author)

Infiltration of trimethylaluminum (TMA) in molecular layer deposition-enabled alucone thin films on planar substrates is a common observation reported in the literature. An insufficient TMA purge time in such cases is often found to lead to a CVD component in the overall film growth due to the reactions between the outgassing TMA and the co...

article 2023

document

Atmospheric Pressure Plasma Assisted Spatial ALD of Silicon Nitride

Shen, J. (author), Roozeboom, F. (author), Mameli, A. (author)

Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-spatial-ALD) of SiNx is demonstrated for the first time. Using bis(diethylamino)silane (BDEAS) and N2 plasma from a dielectric barrier discharge source, a process was developed at low deposition temperatures (≤ 250 °C). The effect of N2 plasma exposure time and overall...

article 2023

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Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2

Merkx, M.J.M. (author), Jongen, R.G.J. (author), Mameli, A. (author), Lemaire, P.C. (author), Sharma, K. (author), Hausmann, D.M. (author), Kessels, W.M.M. (author), Mackus, A.J.M. (author)

As the semiconductor industry progresses toward more complex multilayered devices with ever smaller features, accurately aligning these layers with respect to each other has become a bottleneck in the advancement to smaller transistor nodes. To avoid alignment issues, area-selective atomic layer deposition (ALD) can be employed to deposit...

article 2021

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High Throughput Area Selective Spatial ALD with Interleaved Etching Steps for Low Defectivity

Mameli, A. (author), Roozeboom, F. (author)

public lecture 2021

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Spatial Atomic Layer Deposition for large area and flexible electronics

van den Bruele, F.J. (author), Grob, F. (author), Creyghton, Y.L.M. (author), Shen, J. (author), Bolt, P. (author), Poodt, P.W.G. (author)

public lecture 2021

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ALD and ALE: two biotopes of a kind in atomic-scale processing

Roozeboom, F. (author)

The IRDS 2017 Roadmap catches the scaling challenges faced by the semiconductor industry in the upcoming decades by the overall term "3D Power Scaling". In the past scaling era superior material properties and critical dimensions nearing single-digit nanometer values could still be realized by cost-effective technology solutions. As we approach...

public lecture 2021

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Modeling the initial monolayer formation in thermally localized surface deposition

de Braaf, B. (author), Rops, C.M. (author), Storm, C. (author)

In atomic layer deposition (ALD), thin layers of materials are deposited on a substrate with atomic layer precision in the vertical direction. The ability to control layer growth in the lateral direction as well is expected to greatly increase the potential of ALD as a path to the bottom-up additive fabrication of electronic devices like solar...

article 2021

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Area-selective spatial ALD of SiO2 interleaved with back-etch corrections: Selectivity and surface inspection of non-growth area

Mameli, A. (author), Karasulu, B. (author), Roozeboom, F. (author)

public lecture 2021

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Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Mione, M.A. (author), Vandalon, V. (author), Mameli, A. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) process for SiO2 using bisdiethylaminosilane (BDEAS, SiH2[NEt2]2) and O2 plasma is reported along with an investigation of its underlying growth mechanism. Within the temperature range of 100−250 °C, the process demonstrates self-limiting growth with a growth per...

article 2021

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Area-Selective Spatial ALD of SiO2Interleaved with Etch-Back Supercycles: Quantification of Area Selectivity by Low Energy Ion Scattering

Mameli, A. (author), Brüner, P. (author), Roozeboom, F. (author), Grehl, T. (author), Poodt, P. (author)

public lecture 2020

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The chemistry and energetics of the interface between metal halide perovskite and atomic layer deposited metal oxides

Bracesco, A.E.A. (author), Burgess, C.H. (author), Todinova, A. (author), Zardetto, V. (author), Koushik, D. (author), Kessels, M.M. (author), Dogan, I. (author), Weijtens, C.H.L. (author), Veenstra, S. (author), Andriessen, R. (author), Creatore, M. (author)

The chemistry of the interface between the metal halide perovskite absorber and the charge transport layer affects the performance and stability of metal halide perovskite solar cells (PSCs). The literature provides several examples of poor PSC conversion efficiency values, when electron transport layers (ETLs), such as SnO2 and TiO2, are...

article 2020

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Area-selective deposition of ruthenium by area-dependent surface diffusion

Grillo, F. (author), Soethoudt, J. (author), Marques, E.A. (author), de Martin, L. (author), van Dongen, K. (author), van Ommen, J.R. (author), Delabie, A. (author)

article 2020

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Plasma‑Assisted ALD of Highly Conductive HfNx: on the Effect of Energetic Ions on Film Microstructure

Karwal, S. (author), Verheijen, M.A. (author), Arts, K. (author), Faraz, T. (author), Kessels, W.M.M. (author), Creatore, M. (author)

In this work, we report on the atomic layer deposition (ALD) of HfNx thin films by employing CpHf(NMe2)3 as the Hf(IV) precursor and Ar–H2 plasma in combination with external RF substrate biasing as the co-reactant. Following up on our previous results based on an H2 plasma and external RF substrate biasing, here we address the effect of ions...

article 2020

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Next-Generation Li-ion Batteries Made with Spatial Atomic Layer Deposition as an Enabling Technology

Ameen, M. (author), Beeker, I. (author), Haverkate, L. (author), Anothumakkool, B. (author), Grob, B. (author), Hermes, D. (author), Huijssen, N. (author), Khandan Del, S. (author), Roozeboom, F. (author), Unnikrishnan, S. (author)

public lecture 2020

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On the role of individual etching components in selective atomic layer processing: Etch and deposit to afford high selectivity

Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)

public lecture 2019

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Large-Area Atmospheric-Pressure Spatial ALD enabling All-Solid-State 3D Batteries with Ultrathin LiPON and High-Capacity Electrodes

Ameen, M. (author), Poplawski, M. (author), Haverkate, L. (author), Grob, F. (author), Anothumakkool, B. (author), Hermes, D. (author), del Khandan, S. (author), Roozeboom, F. (author), Unnikrishnan, S. (author)

public lecture 2019

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Isotropic ALE of ZnO using Hacac and O2 plasma

Mameli, A. (author), Verheijen, M.A. (author), Mackus, A.J.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)

public lecture 2019

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Overview of doctoral theses on Atomic Layer Deposition collected in the Virtual Project on the History of ALD

Aarik, J. (author), Roozeboom, F. (author)

The virtual project on the history of ALP (VPHA) is a worldwide collaborative Open Science initiative started in summer 2013, set up to clarify the early days of Atomic Layer Deposition (ALD), especially related to its two independent discoveries. in this VPHA, early ALD publications are overviewed up to 1986 in an atmosphere of Openness,...

public lecture 2019

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Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain high selectivity

Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)

Area-selective atomic layer deposition (AS-ALD) has the potential for pushing device manufacturing towards new frontiers. However, the selectivity that can be obtained is often very limited and the throughput of most AS-ALD methods is low, which hampers its industrial acceptance.[1,2] In this work, we present a process for AS-ALD of SiO2 using...

public lecture 2019

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Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain selectivities > 10 nm

Mameli, A. (author), Roozeboom, F. (author), Poodt, P. (author)

public lecture 2019