Searched for: subject%3A%22Atmospheric%255C%2Bpressure%22
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Shen, J. (author), Roozeboom, F. (author), Mameli, A. (author)
Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-spatial-ALD) of SiNx is demonstrated for the first time. Using bis(diethylamino)silane (BDEAS) and N2 plasma from a dielectric barrier discharge source, a process was developed at low deposition temperatures (≤ 250 °C). The effect of N2 plasma exposure time and overall...
article 2023
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Mameli, A. (author), Parish, J.D. (author), Dogan, T. (author), Gelinck, G. (author), Snook, M.W. (author), Straiton, A.J. (author), Johnson, A.L. (author), Kronemeijer, A.J. (author)
Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)2, and H2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of...
article 2022
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Aninat, R. (author), Hovestad, A. (author), van Zelst, F. (author), van den Bruele, F.J. (author), Schermer, J.J. (author), Emmelkamp, J. (author), Vlieg, E. (author), Linden, H. (author), Theelen, M. (author)
We study by in-situ X-ray diffraction (XRD) in a unique, custom-made furnace mimicking an industrial setup, the effect of pre-annealing on electroplated and sputtered thin films of Cu-In-Ga, as precursor material for Cu(In,Ga)(S,Se)2 (CIGS)-based solar cells. In the first part of the paper, the properties of the as-deposited precursors are...
article 2022
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van den Bruele, F.J. (author), Grob, F. (author), Creyghton, Y.L.M. (author), Shen, J. (author), Bolt, P. (author), Poodt, P.W.G. (author)
public lecture 2021
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Steijn, W.M.P. (author), van Kampen, J.N. (author), van der Beek, D. (author), Groeneweg, J. (author), van Gelder, P.H.A.J.M. (author)
Quantitative Risk Analysis (QRA) is a standard tool in some high-risk industries (such as the on- and offshore exploration and production and chemical industry). Presently, existing knowledge concerning human error likelihood and human reliability assessment is insufficiently represented in QRAs. In this paper we attempt to implement the...
article 2020
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Zardetto, V. (author), Senes, A. (author), Najafi, M. (author), Zhang, D. (author), Joly, R. (author), Chippari, M. (author), Arneouts, T. (author), Poodt, P. (author), Veenstra, S. (author), Andriessen, R. (author)
In order to bring the organo-lead halide perovskite solar cells (PSC) towards the commercialization, the device stability needs to be drastically improved. Our approach relies on the introduction of a compact metal oxide (MeO) layer in a p-i-n planar architecture by means of atmospheric pressure spatial atomic layer deposition (s-ALD) technique....
conference paper 2018
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Theelen, M.J. (author), Schiepers, E. (author), Vermeer, J. (author), Falk, S. (author), Hovestad, A. (author), Steijvers, H.L.A.H. (author), van der Vleuten, M. (author), Bakker, K. (author), Dörenkämper, M. (author), Linden, H. (author)
Two step atmospheric pressure processing of Cu(In,Ga)(Se,S)2 absorbers is an industrially attractive technology to produce CIGS thin film modules. For this procedure, absorber sulfurization is required to increase the Voc and thus the efficiency of the solar cells. Raman spectroscopy was used to qualitatively identify the presence of sulfur on...
conference paper 2018
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Poodt, P.W.G. (author), Mameli, A. (author), Schulpen, J.J.P.M. (author), Kessels, W.M.M. (author), Roozeboom, F. (author)
Atomic layer deposition (ALD) is renowned for its step coverage in porous substrates. Several emerging applications require a combination of this high step coverage with high throughput ALD, like spatial ALD. Often, high throughput ALD is performed at atmospheric pressure, and therefore, the effect of reactor pressure on the saturation dose is...
article 2017
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Mione, M.A. (author), Katsouras, I. (author), Creyghton, Y. (author), van Boekel, W. (author), Maas, J. (author), Gelinck, G. (author), Roozeboom, F. (author), Illiberi, A. (author)
High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates...
article 2017
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Frijters, C.H. (author), Bolt, P.J. (author), Poodt, P. (author), Knaapen, R. (author), van den Brink, J. (author), Ruth, M. (author), Bremaud, D. (author), Illiberi, A. (author)
In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15×15 cm2) S-ALD set-up. We achieved values of...
conference paper 2017
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Frijters, C.H. (author), Bolt, P.J. (author), Poodt, P.W.G. (author), Knaapen, R. (author), van den Brink, J. (author), Ruth, M. (author), Bremaud, D. (author), Illiberi, A. (author)
In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale (15x15 cm2) S-ALD set-up. We achieved values of...
conference paper 2016
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Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)
Non-thermal plasma sources are known to lower the operation temperatures and widen the process windows in thermal ALD of thin-film materials. In spatial ALD, novel plasma sources with exceptional dimensional and chemical stability are required to provide the flow geometries optimized for efficient transport and use of radicals (O, N, H, OH, NH,...
conference paper 2016
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Creyghton, Y. (author), Illiberi, A. (author), Mione, M. (author), van Boekel, W. (author), Debernardi, N. (author), Seitz, M. (author), van den Bruele, F. (author), Poodt, P. (author), Roozeboom, F. (author)
Atomic layer deposition by means of spatial separation of reactive gases is emerging as an industrial manufacturing technology. Integration of non-thermal plasma in spatial ALD machines will further expand the process window towards lower operation temperatures and specific materials requiring radicals (O, N, H, OH, NH etc.). Plasma sources with...
conference paper 2016
document
Illiberi, A. (author), Cobb, B. (author), Sharma, A. (author), Grehl, T. (author), Brongersma, H. (author), Roozeboom, F. (author), Gelinck, G. (author), Poodt, P. (author)
We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition...
article 2015
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Illiberi, A. (author), Frijters, C. (author), Balder, J.E. (author), Poodt, P.W.G. (author), Roozeboom, F. (author)
Spatial Atmosperic Atomic Layer Depositon combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rages (up tot nm/s). In this paper we present a short overview of our research acctivity carried out on S-ALD of functional thin filsm for the front window of...
article 2015
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Roozeboom, F. (author), van den Bruele, F. (author), Creyghton, Y.L.M. (author), Poodt, P.W.G. (author), Kessels, W.M.M. (author)
article 2015
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Brust, H. (author), van Asten, A. (author), Koeberg, M. (author), Dalmolen, J. (author), van der Heijden, A.E.D.M. (author), Schoenmakers, P. (author)
After an explosion of pentaerythritol tetranitrate (PETN), its degradation products pentaerythritol trinitrate (PETriN), dinitrate (PEDiN) and mononitrate (PEMN) were detected using liquid chromatography-atmospheric-pressure chemical-ionization-mass spectrometry (LC-APCI-MS). Discrimination between post-explosion and naturally degraded PETN...
article 2014
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Illiberi, A. (author), Grob, F. (author), Kniknie, B. (author), Frijters, C. (author), van Deelen, J. (author), Poodt, P. (author), Beckers, E.H.A. (author), Bolt, P.J. (author)
ZnO films have been grown on a moving glass substrate by high temperature (480 0C) chemical vapour deposition (CVD) and low temperature (200 0C) plasma enhanced CVD (PE-CVD) process at atmospheric pressure. Deposition rates above 7 nm/s have been achieved for substrate speeds from 20 to 500 mm/min. The conductivity of the films is enhanced by Al...
article 2014
document
Illiberi, A. (author), Poodt, P. (author), Roozeboom, F. (author)
The industrial need for high-throughput and low-cost ZnO deposition processes has triggered the development of atmospheric vapor-phase deposition techniques which can be easily applied to continuous, in-line manufacturing. While atmospheric CVD is a mature technology, new processes for the growth of transparent conductive oxides on thermally...
article 2014
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van den Bruele, F.J. (author), Smets, M.M.H. (author), Illiberi, A. (author), Creyghton, Y.L.M. (author), Buskens, P.J.P. (author), Roozeboom, F. (author), Poodt, P.W.G. (author)
The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18μΩ...
article 2014
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