Searched for: subject%3A%22Aluminum%255C-doped%255C%2Bzinc%255C%2Boxide%22
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Theelen, M. (author), Ntinas, V. (author), Steijvers, H. (author), Mannetje, H. (author), Vroon, Z. (author)
Aluminum doped zinc oxide (ZnO:Al) films were deposited by sputtering on borosilicate glass (sodium poor) and soda lime glass (sodium rich). These films were exposed up to 1032 hours of damp heat (85 °C/85 % relative humidity) to study the influence of among others the sodium content of the substrate on the ZnO:Al stability. A decrease in...
article 2020
Theelen, M. (author), Boumans, T. (author), Stegeman, F. (author), Colberts, F. (author), Illiberi, A. (author), van Berkum, J. (author), Barreau, N. (author), Vroon, Z. (author), Zeman, M. (author)
Sputtered aluminum doped zinc oxide (ZnO:Al) layers on borosilicate glass were exposed to damp heat (85 C/85% relative humidity) for 2876 h to accelerate the physical and chemical degradation behavior. The ZnO:Al samples were characterized by electrical, compositional and optical measurements before and after degradation. Hall measurements show...
article 2014
Illiberi, A. (author), Kniknie, B. (author), van Deelen, J. (author), Steijvers, H.L.A.H. (author), Habets, D. (author), Simons, P.J.P.M. (author), Janssen, A.C. (author), Beckers, E.H.A. (author)
Aluminum doped ZnOx (ZnOx:Al) films have been deposited on glass in an in-line industrial-type reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. Tertiary-butanol has been used as oxidant for diethylzinc and trimethylaluminium as dopant gas. ZnOx:Al films can be grown at very high deposition rates of ~14 nm/s...
article 2011