Searched for: subject%3A%22Aluminum%255C-doped%255C%2Bzinc%255C%2Boxide%22
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Theelen, M. (author), Ntinas, V. (author), Steijvers, H. (author), Mannetje, H. (author), Vroon, Z. (author)Aluminum doped zinc oxide (ZnO:Al) films were deposited by sputtering on borosilicate glass (sodium poor) and soda lime glass (sodium rich). These films were exposed up to 1032 hours of damp heat (85 °C/85 % relative humidity) to study the influence of among others the sodium content of the substrate on the ZnO:Al stability. A decrease in...article 2020
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Theelen, M. (author), Boumans, T. (author), Stegeman, F. (author), Colberts, F. (author), Illiberi, A. (author), van Berkum, J. (author), Barreau, N. (author), Vroon, Z. (author), Zeman, M. (author)Sputtered aluminum doped zinc oxide (ZnO:Al) layers on borosilicate glass were exposed to damp heat (85 C/85% relative humidity) for 2876 h to accelerate the physical and chemical degradation behavior. The ZnO:Al samples were characterized by electrical, compositional and optical measurements before and after degradation. Hall measurements show...article 2014
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Illiberi, A. (author), Kniknie, B. (author), van Deelen, J. (author), Steijvers, H.L.A.H. (author), Habets, D. (author), Simons, P.J.P.M. (author), Janssen, A.C. (author), Beckers, E.H.A. (author)Aluminum doped ZnOx (ZnOx:Al) films have been deposited on glass in an in-line industrial-type reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. Tertiary-butanol has been used as oxidant for diethylzinc and trimethylaluminium as dopant gas. ZnOx:Al films can be grown at very high deposition rates of ~14 nm/s...article 2011